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Cited by 62Photonic and Optical DevicesSemiconductor Lasers and Optical DevicesAdvanced Semiconductor Detectors and Materials

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip

Open access
Gassenq, Alban, Hattasan, Nannicha, Cerutti, Laurent, Rodriguez, Jean Batiste, Tournié, Eric, Roelkens, Gunther·2012·Optics Express
DOI 10.1364/oe.20.011665
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Abstract

In this paper we present GaInAsSb photodiodes heterogeneously integrated on SOI by BCB adhesive bonding for operation in the short-wave infrared wavelength region. Photodiodes using evanescent coupling between the silicon waveguide and the III-V structure are presented, showing a room temperature responsivity of 1.4A/W at 2.3 µm. Photodiode structures using a diffraction grating to couple from the silicon waveguide layer to the integrated photodiode are reported, showing a responsivity of 0.4A/W at 2.2 µm.

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Crossref · 10.1364/oe.20.011665

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1 of 1 references verified0 citation errors · 0 not checkable

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  • The WG-QDPD results are on par with the best-performing bonded III-V photodetectors reported in the literature (responsivity 0.4-1.4 A/W around 2.3 μm and dark current 10 nA-2.5 μA).

    “Notably, these results are on par with the best-performing bonded III-V photodetectors reported in the literature (responsivity 0.4-1.4 A/W around 2.3 μ m and dark current 10 nA-2.5 μ A), 6-9 outperforming monolithically grown GeSn (responsivity < 0.52 A/W and dark current > 1 mA). 13-16”

    From A silicon photonics waveguide-coupled colloidal quantum dot photodiode sensitive beyond 1.6 µ m (2024) · cites this paper as [8]

Citations

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Research works printed but not linked: 10

  1. Jalali, 2006, J. Lightwave Technol., 24, 4600, 10.1109/JLT.2006.885782 · DOI · Paper page
  2. De Vos, 2007, Opt. Express, 15, 7610, 10.1364/OE.15.007610 · DOI
  3. Stankovic, 2011, IEEE Photon. Technol. Lett., 23, 1781, 10.1109/LPT.2011.2169397 · DOI
  4. Hattasan, 2011, IEEE Photon. Technol. Lett., 23, 1760, 10.1109/LPT.2011.2169244 · DOI · Paper page
  5. Dumon, 2004, Photon. Nano. Fund. Appl., 2, 81, 10.1016/j.photonics.2004.07.002 · DOI
  6. Roelkens, 2006, J. Electrochem. Soc., 153, G1015, 10.1149/1.2352045 · DOI · Paper page
  7. Vermeulen, 2010, Opt. Express, 18, 18278, 10.1364/OE.18.018278 · DOI
  8. Bienstman, 2001, Opt. Quantum Electron., 33, 327, 10.1023/A:1010882531238 · DOI
  9. Bogdanov, 2011, Appl. Phys. Lett., 98, 183501, 10.1063/1.3584853 · DOI
  10. Nunna, 2012, IEEE Photon. Technol. Lett., 24, 218, 10.1109/LPT.2011.2177253 · DOI

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Metadata

Authors
Gassenq, A., Hattasan, N., Cerutti, L., Rodriguez, J. B., Tournié, E., & Roelkens, G.
Affiliations
  • Ghent University (BE)
  • Institut d'Électronique et des Systèmes (FR)
ORCID
Venue
Optics Express
Publisher
Optica Publishing Group
Published
2012-05-07
Volume
20
Issue
11
Pages
11665
ISSN
1094-4087 (ISSN-L)
DOI
10.1364/oe.20.011665
OpenAlex
W2029523958
Cited by
62
References
1
Citations by year
2026: 1 · 2025: 2 · 2024: 5 · 2022: 3 · 2021: 2 · 2020: 4 · 2019: 8 · 2018: 4 · 2017: 6 · 2016: 3 · 2015: 4 · 2014: 7 · 2013: 11 · 2012: 2
FWCI
4.91
Type
journal article
Language
en
Open access
Licence
Locations
  • Optics Express (publishedVersion)
  • PubMed (publishedVersion)
  • HAL (submittedVersion)
  • Ghent University Academic Bibliography (Ghent University) (submittedVersion, other-oa)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
Keywords
silicon photonics, heterogeneous integration, SOI, evanescent coupling, silicon waveguides, shortwave infrared, III-V on silicon
MeSH terms
Arsenicals, Equipment Design, Gallium, Indium, Infrared Rays, Light, Photometry, Refractometry, Scattering, Radiation, Semiconductors, Silicon, Systems Integration, Equipment Failure Analysis, Surface Plasmon Resonance

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