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GeSn lateral p-i-n waveguide photodetectors for mid-infrared integrated photonics
Abstract
In this Letter, we demonstrate mid-infrared (MIR) lateral p−i−n GeSn waveguide photodetectors (WGPDs) on silicon, to the best of our knowledge for the first time, as a key enabler of MIR electronic–photonic integrated circuits (EPICs). Narrow-bandgap GeSn alloys were employed as the active material to enable efficient photodetection in the MIR region. A lateral p−i−n homojunction diode was designed and fabricated to significantly enhance the optical confinement factor of the guided modes and thus enhance the optical responsivity. Thus, a photodetection range of up to 1950 nm and a good responsivity of 0.292 A/W at 1800 nm were achieved. These results demonstrate the feasibility of planar GeSn WGPDs for monolithic MIR EPICs on silicon.
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The WG-QDPD outperforms monolithically grown GeSn (responsivity < 0.52 A/W and dark current > 1 mA).
“Notably, these results are on par with the best-performing bonded III-V photodetectors reported in the literature (responsivity 0.4-1.4 A/W around 2.3 μ m and dark current 10 nA-2.5 μ A), 6-9 outperforming monolithically grown GeSn (responsivity < 0.52 A/W and dark current > 1 mA). 13-16”
From A silicon photonics waveguide-coupled colloidal quantum dot photodiode sensitive beyond 1.6 µ m (2024) · cites this paper as [14]
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Cited by
Sorted by citations
Design and Optimization of GeSn Waveguide Photodetectors for 2-µm Band Silicon Photonics
Ghosh, S., Bansal, R., Sun, G., Soref, R. A., Cheng, H.-H., & Chang, G.-E. (2022) · Sensors · doi:10.3390/s22113978 · Cited by 35
Self-citationA silicon photonics waveguide-coupled colloidal quantum dot photodiode sensitive beyond 1.6 µ m
Pang, C., Deng, Y.-H., Kheradmand, E., Hagelsieb, L. M., Guo, Y., Cheyns, D., Geiregat, P., Hens, Z., & Van Thourhout, D. (2024) · APL Photonics · doi:10.1063/5.0206386 · Cited by 9
Metadata
- Authors
- Tsai, C.-H., Lin, K.-C., Cheng, C.-Y., Lee, K.-C., Cheng, H. H., & Chang, G.-E.
- Affiliations
- National Chung Cheng University (TW)
- National Taiwan University (TW)
- Corresponding author
- Tsai, Cheng-Hsun
- Lin, Kuan-Chih
- Cheng, Chin-Yuan
- Lee, Kuo-Chih
- Cheng, H. H.
- Chang, Guo-En
- Venue
- Optics Letters
- Publisher
- Optica Publishing Group
- Published
- 2021-02-10
- Volume
- 46
- Issue
- 4
- Pages
- 864
- ISSN
- 0146-9592 (ISSN-L)
- 1539-4794
- OpenAlex
- W3124363531
- Cited by
- 43
- References
- 0
- Citations by year
- 2026: 3 · 2025: 5 · 2024: 14 · 2023: 8 · 2022: 6 · 2021: 7
- FWCI
- 2.57
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Optics Letters (publishedVersion)
- PubMed (publishedVersion)
- Funders
- Ministry of Science and Technology, Taiwan (MOST 109-2636-E-194-002)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Photorefractive and Nonlinear Optics
- Keywords
- GeSn, waveguide photodetectors, mid-infrared photodetection, optical confinement factor, optical responsivity, electronic-photonic integrated circuits, silicon photonics, monolithic integration
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