History and Recent Developments of Packaging Technology for SiC Power Devices
Open accessAbstract
Packaging plays an important role to allow the full potential of silicon carbide devices to be realised. The physical properties of silicon carbide will allow devices to operate with junction temperatures well above 200 °C, but today standard-packaged SiC products are limited to a maximum junction temperature of 175 °C. The limitation lies in the packaging, because a power device package is a complex structure consisting of many components of different materials and with correspondingly different thermal properties. As such, the assembly technologies define both the performance and lifetime of discrete packages and power modules. In this paper we give an insight of packaging technology for SiC devices from the beginning in the mid-1980s through to the state-of-the-art of today. In addition, new packaging technologies to enable power SiC devices to operate up to 200 °C are discussed.
Integrity signals
Registry
Cites
Statistics
Claims the paper makes
Cites
Extreme temperature 6H‐SiC JFET integrated circuit technology
Neudeck, P. G., Garverick, S. L., Spry, D. J., Chen, L., Beheim, G. M., Krasowski, M. J., & Mehregany, M. (2009) · physica status solidi (a) · doi:10.1002/pssa.200925188 · Cited by 141 · cited 2× · see citing works
“packaged 6H-SiC JFETs IC amplifier stage [2] Fig.”
BackgroundMethod
Flagged first, then by citations
8 of the 9 references couldn’t be matched to a known paper.
Cited by
Sorted by citations
Review of Topside Interconnections for Wide Bandgap Power Semiconductor Packaging
Wang, L., Wang, W., Hueting, R. J. E., Rietveld, G., & Ferreira, J. A. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2022.3200469 · Cited by 73 · see citing works
Investigation into electrochemical oxidation behavior of 4H-SiC with varying anodizing conditions
Chen, Z., & Zhao, Y. (2019) · Electrochemistry Communications · doi:10.1016/j.elecom.2019.106608 · Cited by 41 · see citing works
Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics
Jouha, W., Masmoudi, M., Oualkadi, A. E., Joubert, E., & Dherbécourt, P. (2020) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2020.2999029 · Cited by 28 · see citing works
“2999029 devices is limited to 175◦C, while the physical properties of silicon carbide allow devices to operate with junction temperatures well above 200 ◦C [3].”
BackgroundAC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters
Farhadi, M., Vankayalapati, B. T., Sajadi, R., & Akin, B. (2023) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2023.3271251 · Cited by 24 · see citing works
“In addition, the packaging technologies limit the operating temperature of SiC and its specific on-resistance [13].”
BackgroundSilicon Carbide Technology: State-of-the-Art
Śvárna, V., & Frivaldský, M. (2024) · ELEKTRO · doi:10.1109/elektro60337.2024.10556881 · Cited by 3 · see citing works
“This package does not follow the newest trend in terms of size and implementation to the PCB design but according to the simulations, switching losses can be decreased by using a TO-247 package with an extra source pin (TO-247-4) [21][22].”
MethodReliability and Condition Monitoring of Sic Power MOSFETsPreprint
Farhadi, M. (2024) · SSRN Electronic Journal · doi:10.2139/ssrn.4832844 · Cited by 2 · see citing works
Design of Miniaturized Package for SiC High-Voltage Device
Yang, Y., Gao, L., & Gong, T. (2024) · International Conference on Electronic Packaging Technology (ICEPT) · doi:10.1109/icept63120.2024.10668542
“Conventional packages such as TO packages and power modules, both utilizing wire bonding for chip front-end interconnection, have limitations due to their large size and high parasitic inductance[2].”
Background
- Authors
- Dohnke, K. O., Guth, K., & Heuck, N.
- Affiliations
- Infineon Technologies (Germany) (DE)
- Corresponding author
- Dohnke, Karl Otto
- Venue
- Materials Science Forum
- Publisher
- Trans Tech Publications, Ltd.
- Published
- 2016-05-24
- Volume
- 858
- Pages
- 1043-1048
- ISSN
- 0255-5476 (ISSN-L)
- 1662-9752
- OpenAlex
- W2404524715
- Cited by
- 7
- References
- 9
- Citations by year
- 2024: 3 · 2023: 1 · 2022: 1 · 2020: 1 · 2019: 1
- FWCI
- 0.15
- Type
- journal article
- Language
- en
- Open access
- hybrid
- doi.org
- Licence
- Locations
- Materials science forum (publishedVersion, cc-by)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electronic Packaging and Soldering Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Keywords
- silicon carbide, power device packaging, high-temperature operation, junction temperature, power modules, assembly technology, thermal properties
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
