The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Impact of different dopants on the switching properties of ferroelectric hafniumoxide
Open accessAbstract
The wake-up behavior of ferroelectric thin film capacitors based on doped hafnium oxide dielectrics in TiN-based metal–insulator–metal structures is reported. After field cycling a remanent polarization up to 40 µC/cm 2 and a high coercive field of about 1 MV/cm was observed. Doping of HfO 2 by different dopants with a crystal radius ranging from 54 pm (Si) to 132 pm (Sr) was evaluated. In all cases, an improved polarization–voltage hysteresis after wake-up cycling is visible. For smaller dopant atoms like Si and Al stronger pinching of the polarization hysteresis appeared with increasing dopant concentration and proved to be stable during cycling.
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Shannon, R. D. (1976) · Acta Crystallographica Section A · doi:10.1107/s0567739476001551 · Cited by 66,145
Cited by
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Self-citationThe Past, the Present, and the Future of Ferroelectric Memories
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Self-citationLanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material
Schroeder, U., Richter, C., Park, M. H., Schenk, T., Pešić, M., Hoffmann, M., Fengler, F. P. G., Pohl, D., Rellinghaus, B., Zhou, C., et al. (2018) · Inorganic Chemistry · doi:10.1021/acs.inorgchem.7b03149 · Cited by 367
Self-citationElectric field cycling behavior of ferroelectric hafnium oxide
Schenk, T., Schroeder, U., Pešić, M., Popovici, M., Pershin, Y. V., & Mikolajick, T. (2014) · ACS Applied Materials & Interfaces · doi:10.1021/am504837r · Cited by 197
Self-citationFluorite-structure antiferroelectrics
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Metadata
- Authors
- Schroeder, U., Yurchuk, E., Müller, J., Martin, D., Schenk, T., Polakowski, P., Adelmann, C., Popovici, M. I., Kalinin, S. V., & Mikolajick, T.
- Venue
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Published
- 2014-07-10
- Volume
- 53
- Issue
- 8S1
- Pages
- 08LE02
- ISSN
- 0021-4922 (ISSN-L)
- 1347-4065
- OpenAlex
- W1990324180
- Cited by
- 410
- References
- 1
- FWCI
- 10.26
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Schroeder, U., Yurchuk, E., Müller, J., Martin, D., Schenk, T., Polakowski, P., Adelmann, C., Popovici, M. I., Kalinin, S. V., & Mikolajick, T. (2014). Impact of different dopants on the switching properties of ferroelectric hafniumoxide. Japanese Journal of Applied Physics. https://doi.org/10.7567/jjap.53.08le02
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