Hwang, Cheol Seong

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., et al. (2010) · Nature Nanotechnology

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

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Multifunctional wearable devices for diagnosis and therapy of movement disorders

Son, D., Lee, J., Qiao, S., Ghaffari, R., Kim, J., Lee, J. E., Song, C., Kim, S. J., Lee, D. J., Jun, S. W., et al. (2014) · Nature Nanotechnology

Advanced Sensor and Energy Harvesting MaterialsNeuroscience and Neural Engineering

Cited by 1,462

Resistive switching materials for information processing

Wang, Z., Wu, H., Burr, G. W., Hwang, C. S., Wang, K. L., Xia, Q., & Yang, J. J. (2020) · Nature Reviews Materials

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

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Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta2O5/HfO2‐x/TiN Structure

Yoon, J. H., Song, S. J., Yoo, I., Seok, J. Y., Yoon, K. J., Kwon, D. E., Park, T. H., & Hwang, C. S. (2014) · Advanced Functional Materials

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

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Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application

Kim, K. M., Zhang, J., Graves, C., Yang, J. J., Choi, B. J., Hwang, C. S., Li, Z., & Williams, R. S. (2016) · Nano Letters

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

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Nociceptive Memristor

Kim, Y., Kwon, Y. J., Kwon, D. E., Yoon, K. J., Yoon, J. H., Yoo, S., Kim, H. J., Park, T. H., Han, J., Kim, K. M., et al. (2018) · Advanced Materials

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

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Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

Yoon, J. H., Kim, K. M., Song, S. J., Seok, J. Y., Yoon, K. J., Kwon, D. E., Park, T. H., Kwon, Y. J., Shao, X., & Hwang, C. S. (2015) · Advanced Materials

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

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Fluorite-structure antiferroelectrics

Park, M. H., & Hwang, C. S. (2019) · Reports on Progress in Physics

Ferroelectric and Negative Capacitance DevicesFerroelectric and Piezoelectric Materials

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Defect-Engineered Electroforming-Free Analog HfOx Memristor and Its Application to the Neural Network

Kim, G. S., Song, H., Lee, Y. K., Kim, J. H., Kim, W., Park, T. H., Kim, H. J., Min Kim, K., & Hwang, C. S. (2019) · ACS Applied Materials & Interfaces

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

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A True Random Number Generator Using Threshold‐Switching‐Based Memristors in an Efficient Circuit Design

Woo, K. S., Wang, Y., Kim, J., Kim, Y., Kwon, Y. J., Yoon, J. H., Kim, W., & Hwang, C. S. (2019) · Advanced Electronic Materials

Advanced Memory and Neural ComputingPhysical Unclonable Functions (PUFs) and Hardware Security

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A Combination of a Volatile‐Memristor‐Based True Random‐Number Generator and a Nonlinear‐Feedback Shift Register for High‐Speed Encryption

Woo, K. S., Wang, Y., Kim, Y., Kim, J., Kim, W., & Hwang, C. S. (2020) · Advanced Electronic Materials

Advanced Memory and Neural ComputingPhysical Unclonable Functions (PUFs) and Hardware Security

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Extension of Two-Port Sneak Current Cancellation Scheme to 3-D Vertical RRAM Crossbar Array

Bae, W., Yoon, K. J., Hwang, C. S., & Jeong, D.-K. (2017) · IEEE Transactions on Electron Devices

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

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