A Combination of a Volatile‐Memristor‐Based True Random‐Number Generator and a Nonlinear‐Feedback Shift Register for High‐Speed Encryption
Abstract
A true random‐number generator (TRNG) and a nonlinear feedback shift register (NFSR) are combined to create a new type of TRNG. This TRNG is based on the intrinsic stochasticity of threshold switching behavior in a Pt/HfO 2/TiN memristor and an NFSR circuit. Considering the transition rate of the hopping process, the stochasticity of the delay time can be attributed to the phonon‐assisted hopping process. This novel TRNG passes all 15 National Institute of Standards and Technology randomness tests without post‐processing steps, proving its performance as a hardware security application. By combining the TRNG with the NFSR, the bit generation rate is further improved, allowing it to be used for high‐speed applications.
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Their lack of compatibility with CMOS fabrication standards makes it difficult to apply them directly to the current CMOS logic platform used for mass production.
“Moreover, their lack of compatibility with CMOS fabrication standards makes it difficult to apply them directly to the current CMOS logic platform used for mass production.”
From Cryptographic transistor for true random number generator with low power consumption (2024) · cites this paper as [17]
tRNGs such as RRAM or MRAM are widely studied given their inherent switching stochasticity as an entropy source, which relies on material-induced variations.
“For example, tRNGs such as RRAM or MRAM, which are not Si-based complementary metal-oxide semiconductor (CMOS) devices, are widely studied given their inherent switching stochasticity as an entropy source, which relies on material-induced variations (11–18).”
From Cryptographic transistor for true random number generator with low power consumption (2024) · cites this paper as [17]
These tRNGs require a few entropy extraction circuits, each of which consumes power at the milliwatt level.
“However, these tRNGs require a few entropy extraction circuits, each of which consumes power at the milliwatt level.”
From Cryptographic transistor for true random number generator with low power consumption (2024) · cites this paper as [17]
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- Authors
- Woo, K. S., Wang, Y., Kim, Y., Kim, J., Kim, W., & Hwang, C. S.
- Affiliations
- Seoul National University (KR)
- Corresponding author
- Hwang, Cheol Seong
- Venue
- Advanced Electronic Materials
- Publisher
- Wiley
- Published
- 2020-03-05
- Volume
- 6
- Issue
- 5
- ISSN
- 2199-160X (ISSN-L)
- OpenAlex
- W3009107341
- Cited by
- 52
- References
- 20
- Citations by year
- 2026: 6 · 2025: 9 · 2024: 14 · 2023: 10 · 2022: 5 · 2021: 8
- FWCI
- 1.98
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Advanced Electronic Materials (publishedVersion)
- Funders
- Ministry of Trade, Industry and Energy
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Computer Science › Hardware and Architecture › Physical Unclonable Functions (PUFs) and Hardware Security
- Physical Sciences › Computer Science › Computer Vision and Pattern Recognition › Chaos-based Image/Signal Encryption
- Keywords
- true random number generator, memristors, threshold switching, phonon-assisted hopping, nonlinear feedback shift registers, hardware security, high-speed encryption, NIST randomness tests
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