Waser, Rainer

Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 5,080

Nanoionics-based resistive switching memories

Waser, R., & Aono, M. (2007) · Nature Materials

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 4,923

Electrochemical metallization memories—fundamentals, applications, prospects

Valov, I., Waser, R., Jameson, J. R., & Kozicki, M. N. (2011) · Nanotechnology

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 921

Nanobatteries in redox-based resistive switches require extension of memristor theory

Valov, I., Linn, E., Tappertzhofen, S., Schmelzer, S., van den Hurk, J., Lentz, F., & Waser, R. (2013) · Nature Communications

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 587

Origin of the Ultra‐nonlinear Switching Kinetics in Oxide‐Based Resistive Switches

Menzel, S., Waters, M., Marchewka, A., Böttger, U., Dittmann, R., & Waser, R. (2011) · Advanced Functional Materials

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 348

Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

Schindler, C., Staikov, G., & Waser, R. (2009) · Applied Physics Letters

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 307

Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems

Guo, X., Schindler, C., Menzel, S., & Waser, R. (2007) · Applied Physics Letters

Advanced Memory and Neural ComputingPhase-change materials and chalcogenides

Cited by 248

Electrochemical metallization cells—blending nanoionics into nanoelectronics?

Lu, W., Jeong, D. S., Kozicki, M., & Waser, R. (2012) · MRS Bulletin

Advanced Memory and Neural ComputingElectrodeposition and Electroless Coatings

Cited by 113

Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells

Schroeder, H., Zhirnov, V. V., Cavin, R. K., & Waser, R. (2010) · Journal of Applied Physics

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 108

Faradaic currents during electroforming of resistively switching Ag–Ge–Se type electrochemical metallization memory cells

Schindler, C., Valov, I., & Waser, R. (2009) · Physical Chemistry Chemical Physics

Advanced Memory and Neural ComputingPhase-change materials and chalcogenides

Cited by 51

Effects of Thermal Annealing on the Structure of Ferroelectric Thin Films

Cao, J., Solbach, A., Klemradt, U., Weirich, T., Mayer, J., Böttger, U., Ellerkmann, U., Schorn, P. J., Gerber, P., & Waser, R. (2006) · Journal of the American Ceramic Society

Ferroelectric and Piezoelectric MaterialsFerroelectric and Negative Capacitance Devices

Cited by 13