Castellazzi, A.

A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module

Li, J., Castellazzi, A., Eleffendi, M. A., Gurpinar, E., Johnson, C. M., & Mills, L. (2018) · IEEE Transactions on Power Electronics

Silicon Carbide Semiconductor TechnologiesAdvanced DC-DC Converters

Cited by 105

High temperature gate-bias and reverse-bias tests on SiC MOSFETs

Yang, L., & Castellazzi, A. (2013) · Microelectronics Reliability

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

Cited by 72

Body diode reliability investigation of SiC power MOSFETs

Fayyaz, A., Romano, G., & Castellazzi, A. (2016) · Microelectronics Reliability

Silicon Carbide Semiconductor TechnologiesRadiation Effects in Electronics

Cited by 42

High temperature pulsed-gate robustness testing of SiC power MOSFETs

Fayyaz, A., & Castellazzi, A. (2015) · Microelectronics Reliability

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

Cited by 40

Effect of Parameters Variability on the Performance of SiC MOSFET Modules

Borghese, A., Riccio, M., Fayyaz, A., Castellazzi, A., Maresca, L., Breglio, G., & Irace, A. (2018) · 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC)

Silicon Carbide Semiconductor TechnologiesAdvanced DC-DC Converters

Cited by 13