High temperature pulsed-gate robustness testing of SiC power MOSFETs
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The HTGS test is more realistic and the DUT experiences gate-source voltage transient, but the test time is relatively long and the channel is not conducted.
“This test is more realistic and device under test (DUT) experiences gate-source voltage transient. However, the test time is relatively long, and the channel is not conducted.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [59]
The HTGS test uses high-frequency pulses to the gate source for close to real conditions.
“The high temperature gate switching (HTGS) test uses high-frequency pulses to the gate source for close to the real conditions [59].”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [59]
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- Authors
- Fayyaz, A., & Castellazzi, A.
- Affiliations
- University of Nottingham (GB)
- Corresponding author
- Fayyaz, A.
- Venue
- Microelectronics Reliability
- Publisher
- Elsevier BV
- Published
- 2015-08
- Volume
- 55
- Issue
- 9-10
- Pages
- 1724-1728
- ISSN
- 0026-2714 (ISSN-L)
- OpenAlex
- W1053145349
- Cited by
- 40
- References
- 11
- Citations by year
- 2026: 2 · 2025: 3 · 2024: 7 · 2023: 1 · 2022: 4 · 2021: 3 · 2020: 3 · 2019: 3 · 2018: 11 · 2017: 1 · 2016: 2
- FWCI
- 2.25
- Type
- journal article
- Language
- en
- Open access
- Licence
- Locations
- Microelectronics Reliability (publishedVersion)
- Repository@Nottingham (University of Nottingham) (acceptedVersion, other-oa)
- Repository@Nottingham (University of Nottingham) (submittedVersion, cc-by-nc-nd)
- Nottingham ePrints (University of Nottingham) (submittedVersion, cc-by-nc-nd)
- Funders
- Engineering and Physical Sciences Research Council (EP/K031082/1)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Keywords
- SiC MOSFET, gate oxide reliability, high-temperature testing, threshold voltage degradation, gate leakage current, SiO2/SiC interface, electric field distribution, power semiconductor devices
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