Body diode reliability investigation of SiC power MOSFETs
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VSD has relatively higher sensitivity (up to 0.7 V shift over aging) compared to IDSS (850 nA shift over aging).
“Between them, VSD has relatively higher sensitivity (up to 0.7 V shift over aging) compared to IDSS (850 nA shift over aging) [66], [67].”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [67]
Body diode voltage VSD is a body diode degradation indicator.
“Body diode voltage ( VSD ) and drain leakage current ( IDSS ) are body diode degradation indicators.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [67]
Drain leakage current IDSS is a body diode degradation indicator.
“Body diode voltage ( VSD ) and drain leakage current ( IDSS ) are body diode degradation indicators.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [67]
Cites
Silicon carbide benefits and advantages for power electronics circuits and systems
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The impact of gate-induced drain leakage current on MOSFET scaling
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A New Degradation Mechanism in High-Voltage SiC Power MOSFETs
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SiC power MOSFETs performance, robustness and technology maturity
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Self-citationStructural analysis and reduction of in-grown stacking faults in 4H–SiC epilayers
Izumi, S., Tsuchida, H., Kamata, I., & Tawara, T. (2005) · Applied Physics Letters · doi:10.1063/1.1927274 · Cited by 108 · see citing works
Recent progress in SiC DMOSFETs and JBS diodes at Cree
Callanan, R., Agarwal, A., Burk, A. A., Das, M. K., Hull, B., Husna, F., Powell, A., Richmond, J., Ryu, S., & Zhang, Q. (2008) · Annual Conference of the IEEE Industrial Electronics Society (IECON) · doi:10.1109/iecon.2008.4758417 · Cited by 99 · see citing works
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Stacking faults in silicon carbide
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Reliability of Diode-Integrated SiC Power MOSFET(DioMOS)
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Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers
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Overview of Real-Time Lifetime Prediction and Extension for SiC Power Converters
Ni, Z., Lyu, X., Yadav, O. P., Singh, B. N., Zheng, S., & Cao, D. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2962503 · Cited by 261 · see citing works
Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
Yang, F., Ugur, E., & Akin, B. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2950311 · Cited by 121 · see citing works
Farhadi, M., Yang, F., Pu, S., Vankayalapati, B. T., & Akin, B. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3049394 · Cited by 93 · see citing works
AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters
Farhadi, M., Vankayalapati, B. T., Sajadi, R., & Akin, B. (2023) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2023.3271251 · Cited by 24 · see citing works
“Between them, V SD has relatively higher sensitivity (up to 0.7 V shift over aging) compared to I DSS (850 nA shift over aging) [66], [67].”
ResultInfluentialSiC MOSFETs robustness for diode-less applications
Avino-Salvado, O., Cheng, C., Buttay, C., Morel, H., Labrousse, D., Lefebvre, S., & Ali, M. (2018) · EPE Journal · doi:10.1080/09398368.2018.1456836 · Cited by 17 · see citing works
A Critical Review on Reliability and Short Circuit Robustness of Silicon Carbide Power MOSFETs
Sreejith, S., Ajayan, J., Devasenapati, S. B., Sivasankari, B., & Tayal, S. (2023) · Silicon · doi:10.1007/s12633-022-02039-1 · Cited by 11 · see citing works
- Authors
- Fayyaz, A., Romano, G., & Castellazzi, A.
- Affiliations
- University of Nottingham (GB)
- University of Naples Federico II (IT)
- Corresponding author
- Fayyaz, A.
- Venue
- Microelectronics Reliability
- Publisher
- Elsevier BV
- Published
- 2016-09
- Volume
- 64
- Pages
- 530-534
- ISSN
- 0026-2714 (ISSN-L)
- OpenAlex
- W2520287249
- Cited by
- 42
- References
- 11
- Citations by year
- 2026: 3 · 2025: 8 · 2024: 3 · 2023: 2 · 2022: 3 · 2021: 5 · 2020: 5 · 2019: 6 · 2018: 5 · 2017: 1 · 2016: 1
- FWCI
- 2.00
- Type
- journal article
- Language
- en
- Open access
- Licence
- Locations
- Microelectronics Reliability (publishedVersion)
- Repository@Nottingham (University of Nottingham) (acceptedVersion, other-oa)
- Repository@Nottingham (University of Nottingham) (submittedVersion, cc-by-nc-nd)
- Nottingham ePrints (University of Nottingham) (submittedVersion, cc-by-nc-nd)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Multilevel Inverters and Converters
- Keywords
- silicon carbide power MOSFETs, body diode, device reliability, vertical power MOSFET, freewheeling diode, three-phase inverter, DC-AC inverter, power devices
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Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
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