The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Controlling Bulk Conductivity in Topological Insulators: Key Role of Anti‐Site Defects
Open accessAbstract
Intrinsic topological insulators are realized by alloying Bi(2)Te(3) with Bi(2)Se(3). Angle-resolved photoemission and bulk transport measurements reveal that the Fermi level is readily tuned into the bulk bandgap. First-principles calculations of the native defect landscape highlight the key role of anti-site defects for achieving this, and predict optimal growth conditions to realize maximally resistive topological insulators.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
Zhang, H., Liu, C.-X., Qi, X.-L., Dai, X., Fang, Z., & Zhang, S.-C. (2009) · Nature Physics · doi:10.1038/nphys1270 · Cited by 6,359
Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
Xia, Y., Qian, D., Hsieh, D., Wray, L., Pal, A., Lin, H., Bansil, A., Grauer, D., Hor, Y. S., Cava, R. J., et al. (2009) · Nature Physics · doi:10.1038/nphys1274 · Cited by 3,765
Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2 Te 3
Chen, Y. L., Analytis, J. G., Chu, J.-H., Liu, Z. K., Mo, S.-K., Qi, X. L., Zhang, H. J., Lu, D. H., Dai, X., Fang, Z., et al. (2009) · Science · doi:10.1126/science.1173034 · Cited by 3,585
A tunable topological insulator in the spin helical Dirac transport regime
Hsieh, D., Xia, Y., Qian, D., Wray, L., Dil, J. H., Meier, F., Osterwalder, J., Patthey, L., Checkelsky, J. G., Ong, N. P., et al. (2009) · Nature · doi:10.1038/nature08234 · Cited by 1,979
Cited by
Topological Insulator Materials
Ando, Y. (2013) · Journal of the Physical Society of Japan · doi:10.7566/jpsj.82.102001 · Cited by 1,789
The Thermoelectric Properties of Bismuth Telluride
Witting, I. T., Chasapis, T. C., Ricci, F., Peters, M., Heinz, N. A., Hautier, G., & Snyder, G. J. (2019) · Advanced Electronic Materials · doi:10.1002/aelm.201800904 · Cited by 834
Comprehensive search for topological materials using symmetry indicators
Tang, F., Po, H. C., Vishwanath, A., & Wan, X. (2019) · Nature · doi:10.1038/s41586-019-0937-5 · Cited by 761
Interplay of Orbital and Relativistic Effects in Bismuth Oxyhalides: BiOF, BiOCl, BiOBr, and BiOI
Ganose, A. M., Cuff, M., Butler, K. T., Walsh, A., & Scanlon, D. O. (2016) · Chemistry of Materials · doi:10.1021/acs.chemmater.6b00349 · Cited by 426
Self-citationEmergent quantum confinement at topological insulator surfaces
Bahramy, M. S., King, P. D. C., de la Torre, A., Chang, J., Shi, M., Patthey, L., Balakrishnan, G., Hofmann, P., Arita, R., Nagaosa, N., et al. (2012) · Nature Communications · doi:10.1038/ncomms2162 · Cited by 286
Self-citation
Metadata
- Authors
- Scanlon, D. O., King, P. D. C., Singh, R. P., de la Torre, A., Walker, S. M., Balakrishnan, G., Baumberger, F., & Catlow, C. R. A.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2012-03-19
- Volume
- 24
- Issue
- 16
- Pages
- 2154-2158
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2107636694
- Cited by
- 307
- References
- 4
- FWCI
- 10.97
- Type
- journal article
- Language
- en
- Open access
- green
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Controlling Bulk Conductivity in Topological Insulators: Key Role of Anti‐Site Defects. https://app.cochat.ai/papers/10.1002/adma.201200187
- The paper
- Scanlon, D. O., King, P. D. C., Singh, R. P., de la Torre, A., Walker, S. M., Balakrishnan, G., Baumberger, F., & Catlow, C. R. A. (2012). Controlling Bulk Conductivity in Topological Insulators: Key Role of Anti‐Site Defects. Advanced Materials. https://doi.org/10.1002/adma.201200187
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
