The DOI matches its Crossref record; 27 of the 27 references it cites were found in a registry or an index.
Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits
Abstract
We report ambipolar charge transport in α-molybdenum ditelluride (MoTe2 ) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (Vbg) and drain-source voltage (Vds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications.
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Cites
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
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Graphene-Like Two-Dimensional Materials
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High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
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Solution-processed ambipolar organic field-effect transistors and inverters
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Cited by
Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals
Ruppert, C., Aslan, B., & Heinz, T. F. (2014) · Nano Letters · doi:10.1021/nl502557g · Cited by 986
Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids
Das, S., Robinson, J. A., Dubey, M., Terrones, H., & Terrones, M. (2015) · Annual Review of Materials Research · doi:10.1146/annurev-matsci-070214-021034 · Cited by 640
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Self-citationPhotoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials
Teng, F., Hu, K., Ouyang, W., & Fang, X. (2018) · Advanced Materials · doi:10.1002/adma.201706262 · Cited by 507
Li, C., Cao, Q., Wang, F., Xiao, Y., Li, Y., Delaunay, J.-J., & Zhu, H. (2018) · Chemical Society Reviews · doi:10.1039/c8cs00067k · Cited by 494
Metadata
- Authors
- Lin, Y., Xu, Y., Wang, S., Li, S., Yamamoto, M., Aparecido‐Ferreira, A., Li, W., Sun, H., Nakaharai, S., Jian, W., Ueno, K., & Tsukagoshi, K.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2014-04
- Volume
- 26
- Issue
- 20
- Pages
- 3263-3269
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2160741827
- Cited by
- 473
- References
- 27
- FWCI
- 17.87
- Type
- journal article
- Language
- en
- Open access
- closed
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- Lin, Y., Xu, Y., Wang, S., Li, S., Yamamoto, M., Aparecido‐Ferreira, A., Li, W., Sun, H., Nakaharai, S., Jian, W., Ueno, K., & Tsukagoshi, K. (2014). Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits. Advanced Materials. https://doi.org/10.1002/adma.201305845
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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