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Ferroelectricity in Si‐Doped HfO2 Revealed: A Binary Lead‐Free Ferroelectric
Abstract
Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior.
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Citations
Cited by
Stabilizing the ferroelectric phase in doped hafnium oxide
Hoffmann, M., Schroeder, U., Schenk, T., Shimizu, T., Funakubo, H., Sakata, O., Pohl, D., Drescher, M., Adelmann, C., Materlik, R., et al. (2015) · Journal of Applied Physics · doi:10.1063/1.4927805 · Cited by 606
Self-citationNext generation ferroelectric materials for semiconductor process integration and their applications
Mikolajick, T., Slesazeck, S., Mulaosmanovic, H., Park, M. H., Fichtner, S., Lomenzo, P. D., Hoffmann, M., & Schroeder, U. (2021) · Journal of Applied Physics · doi:10.1063/5.0037617 · Cited by 454
Self-citationSwitching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors
Mulaosmanovic, H., Ocker, J., Müller, S., Schroeder, U., Müller, J., Polakowski, P., Flachowsky, S., van Bentum, R., Mikolajick, T., & Slesazeck, S. (2017) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.6b13866 · Cited by 344
Self-citationVasudevan, R. K., Balke, N., Maksymovych, P., Jesse, S., & Kalinin, S. V. (2017) · Applied Physics Reviews · doi:10.1063/1.4979015 · Cited by 344
Self-citationElectric field cycling behavior of ferroelectric hafnium oxide
Schenk, T., Schroeder, U., Pešić, M., Popovici, M., Pershin, Y. V., & Mikolajick, T. (2014) · ACS Applied Materials & Interfaces · doi:10.1021/am504837r · Cited by 197
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Metadata
- Authors
- Martin, D., Müller, J., Schenk, T., Arruda, T. M., Kumar, A., Strelcov, E., Yurchuk, E., Müller, S., Pohl, D., Schröder, U., Kalinin, S. V., & Mikolajick, T.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2014-10-28
- Volume
- 26
- Issue
- 48
- Pages
- 8198-8202
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2081610269
- Cited by
- 181
- References
- 0
- FWCI
- 7.61
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Ferroelectricity in Si‐Doped HfO2 Revealed: A Binary Lead‐Free Ferroelectric. https://app.cochat.ai/papers/10.1002/adma.201403115
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- Martin, D., Müller, J., Schenk, T., Arruda, T. M., Kumar, A., Strelcov, E., Yurchuk, E., Müller, S., Pohl, D., Schröder, U., Kalinin, S. V., & Mikolajick, T. (2014). Ferroelectricity in Si‐Doped HfO2 Revealed: A Binary Lead‐Free Ferroelectric. Advanced Materials. https://doi.org/10.1002/adma.201403115
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