The DOI matches its Crossref record; 110 of the 110 references it cites were found in a registry or an index.
Next generation ferroelectric materials for semiconductor process integration and their applications
Open accessAbstract
Ferroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities. To realize integrated systems, the integration of these functionalities into semiconductor processes is necessary. To this end, the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems. The discovery of ferroelectricity in hafnium oxide-based materials brought a renewed interest into this field during the last decade. Very recently, ferroelectricity was also verified in aluminum scandium nitride extending the potential of seeing a wealth of ferroelectric functions in integrated electronics in the future. This paper discusses the prospects of both material systems in various applications.
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Cites
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Self-citationFerroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
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Cited by
The fundamentals and applications of ferroelectric HfO2
Schroeder, U., Park, M. H., Mikolajick, T., & Hwang, C. S. (2022) · Nature Reviews Materials · doi:10.1038/s41578-022-00431-2 · Cited by 710
Self-citationWurtzite and fluorite ferroelectric materials for electronic memory
Kim, K.-H., Karpov, I., Olsson, R. H., & Jariwala, D. (2023) · Nature Nanotechnology · doi:10.1038/s41565-023-01361-y · Cited by 283
Metadata
- Authors
- Mikolajick, T., Slesazeck, S., Mulaosmanovic, H., Park, M. H., Fichtner, S., Lomenzo, P. D., Hoffmann, M., & Schroeder, U.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2021-03-11
- Volume
- 129
- Issue
- 10
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W3133940875
- Cited by
- 454
- References
- 110
- FWCI
- 19.87
- Type
- journal article
- Language
- en
- Open access
- hybrid
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- Mikolajick, T., Slesazeck, S., Mulaosmanovic, H., Park, M. H., Fichtner, S., Lomenzo, P. D., Hoffmann, M., & Schroeder, U. (2021). Next generation ferroelectric materials for semiconductor process integration and their applications. Journal of Applied Physics. https://doi.org/10.1063/5.0037617
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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