The DOI matches its Crossref record; 20 of the 20 references it cites were found in a registry or an index.
Skin‐Inspired Haptic Memory Arrays with an Electrically Reconfigurable Architecture
Abstract
Skin-inspired haptic-memory devices, which can retain pressure information after the removel of external pressure by virtue of the nonvolatile nature of the memory devices, are achieved. The rise of haptic-memory devices will allow for mimicry of human sensory memory, opening new avenues for the design of next-generation high-performance sensing devices and systems.
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Cites
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Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
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Memristive devices for computing
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Highly sensitive flexible pressure sensors with microstructured rubber dielectric layers
Mannsfeld, S. C. B., Tee, B. C.-K., Stoltenberg, R. M., Chen, C. V. H.-H., Barman, S., Muir, B. V. O., Sokolov, A. N., Reese, C., & Bao, Z. (2010) · Nature Materials · doi:10.1038/nmat2834 · Cited by 3,291
An ultra-lightweight design for imperceptible plastic electronics
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Metadata
- Authors
- Zhu, B., Wang, H., Liu, Y., Qi, D., Liu, Z., Wang, H., Yu, J., Sherburne, M., Wang, Z., & Chen, X.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2015-12-16
- Volume
- 28
- Issue
- 8
- Pages
- 1559-1566
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2199190906
- Cited by
- 210
- References
- 20
- FWCI
- 9.59
- Type
- journal article
- Language
- en
- Open access
- closed
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- Zhu, B., Wang, H., Liu, Y., Qi, D., Liu, Z., Wang, H., Yu, J., Sherburne, M., Wang, Z., & Chen, X. (2016). Skin‐Inspired Haptic Memory Arrays with an Electrically Reconfigurable Architecture. Advanced Materials. https://doi.org/10.1002/adma.201504754
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