The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.
Li‐Ion Synaptic Transistor for Low Power Analog Computing
Open accessAbstract
Nonvolatile redox transistors (NVRTs) based upon Li-ion battery materials are demonstrated as memory elements for neuromorphic computer architectures with multi-level analog states, "write" linearity, low-voltage switching, and low power dissipation. Simulations of backpropagation using the device properties reach ideal classification accuracy. Physics-based simulations predict energy costs per "write" operation of <10 aJ when scaled to 200 nm × 200 nm.
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Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Memristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885
Training and operation of an integrated neuromorphic network based on metal-oxide memristors
Prezioso, M., Merrikh-Bayat, F., Hoskins, B. D., Adam, G. C., Likharev, K. K., & Strukov, D. B. (2015) · Nature · doi:10.1038/nature14441 · Cited by 3,001
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Burr, G. W., Shelby, R. M., Sidler, S., di Nolfo, C., Jang, J., Boybat, I., Shenoy, R. S., Narayanan, P., Virwani, K., Giacometti, E. U., et al. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2015.2439635 · Cited by 936
Origin of the Ultra‐nonlinear Switching Kinetics in Oxide‐Based Resistive Switches
Menzel, S., Waters, M., Marchewka, A., Böttger, U., Dittmann, R., & Waser, R. (2011) · Advanced Functional Materials · doi:10.1002/adfm.201101117 · Cited by 348
Measuring the switching dynamics and energy efficiency of tantalum oxide memristors
Strachan, J. P., Torrezan, A. C., Medeiros-Ribeiro, G., & Williams, R. S. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/50/505402 · Cited by 114
Cited by
The future of electronics based on memristive systems
Zidan, M. A., Strachan, J. P., & Lu, W. D. (2018) · Nature Electronics · doi:10.1038/s41928-017-0006-8 · Cited by 2,138
Organic electrochemical transistors
Rivnay, J., Inal, S., Salleo, A., Owens, R. M., Berggren, M., & Malliaras, G. G. (2018) · Nature Reviews Materials · doi:10.1038/natrevmats.2017.86 · Cited by 2,065
Resistive switching materials for information processing
Wang, Z., Wu, H., Burr, G. W., Hwang, C. S., Wang, K. L., Xia, Q., & Yang, J. J. (2020) · Nature Reviews Materials · doi:10.1038/s41578-019-0159-3 · Cited by 1,214
Equivalent-accuracy accelerated neural-network training using analogue memory
Ambrogio, S., Narayanan, P., Tsai, H., Shelby, R. M., Boybat, I., di Nolfo, C., Sidler, S., Giordano, M., Bodini, M., Farinha, N. C. P., et al. (2018) · Nature · doi:10.1038/s41586-018-0180-5 · Cited by 1,151
Neuromorphic computing with multi-memristive synapses
Boybat, I., Le Gallo, M., Nandakumar, S. R., Moraitis, T., Parnell, T., Tuma, T., Rajendran, B., Leblebici, Y., Sebastian, A., & Eleftheriou, E. (2018) · Nature Communications · doi:10.1038/s41467-018-04933-y · Cited by 899
Metadata
- Authors
- Fuller, E. J., Gabaly, F. E., Léonard, F., Agarwal, S., Plimpton, S. J., Jacobs‐Gedrim, R. B., James, C. D., Marinella, M. J., & Talin, A. A.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2016-11-22
- Volume
- 29
- Issue
- 4
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2552299751
- Cited by
- 605
- References
- 7
- FWCI
- 15.86
- Type
- journal article
- Language
- en
- Open access
- green
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- Fuller, E. J., Gabaly, F. E., Léonard, F., Agarwal, S., Plimpton, S. J., Jacobs‐Gedrim, R. B., James, C. D., Marinella, M. J., & Talin, A. A. (2017). Li‐Ion Synaptic Transistor for Low Power Analog Computing. Advanced Materials. https://doi.org/10.1002/adma.201604310
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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