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Cited by 7Perovskite Materials and ApplicationsOrganic Electronics and Photovoltaics2D Materials and Applications

Polymer–Perovskite Microcrystal Heterojunction for Self-Powered Optical Sensing and Communication

Open access
Sathyanarayana, Sandaap, Das, Bikas C.·2026·Advanced Materials
DOI 10.1002/adma.202517950
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Abstract

Abstract The quasiepitaxial polymer‐perovskite interface is a critical enabler for next‐generation optoelectronics, offering opulent features of efficient exciton dissociation and carrier transport. However, interfacial complexities, including energy barriers, poor interface, and defect states, pose significant challenges to scalability and performance. This study maps the nanoscale barrier landscape across the polymer‐perovskite interface, revealing excellent photodetection performance and robust optical communication capacity. A tactical quasiepitaxial growth approach enables the fabrication of a high‐yield inorganic–organic abrupt hybrid heterojunction (HHJ) photodetector by integrating CsPbBr 3 monocrystal with a patterned poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) film. This strategy boosts the fabrication yield from 5% to 38% and exhibits significant autonomous light‐sensing performance, including an ultra‐low dark current of below 10 fA at room temperature, a substantial dark‐to‐light conductivity ratio exceeding 10 6 , a linear dynamic range (LDR) of ≈132.2 dB, and an open‐circuit photovoltage of ≈0.7 V. The critical role of Br − vacancies in governing the photoelectrical behavior of the polymer‐perovskite microcrystal heterojunction (PPMC HJ) device is revealed precisely at the nanoscale using various advanced KPFM techniques. Additionally, a light‐to‐frequency converter demonstrates its advanced sensing capabilities. These findings highlight the importance of precision‐engineered polymer‐perovskite microcrystal heterojunctions in overcoming current performance bottlenecks, paving the way for scalable, ultrafast photonic devices with superior performance and reliability.

Integrity signals

Registry

Crossref · 10.1002/adma.202517950

Cites

44 of 44 references verified0 citation errors · 0 not checkable

Statistics

Nothing to recompute.

Claims the paper makes

0 of 8 cited sources checked · 0 supported · 0 flagged

  • Findingown data

    The PPMC HJ device exhibits a dark-to-light conductivity ratio exceeding 10^6.

    “a substantial dark-to-light conductivity ratio exceeding 10 6”
    • Also stated in: § DOI: 10.1002/adma.202517950 · plain
      “a distinguished dark-to-light conductivity ratio exceeding 10 6”
    • Also stated in: § 2.2. Light Sensing Capability of Quasi-Epitaxial PPMC HJ Devices · plain
      “a large light-to-dark current density ratio (J light /J dark ) higher than 10 6”
    Quote in the paperSubstantial claim
  • Findingown data

    The PPMC HJ device exhibits a linear dynamic range (LDR) of ≈132.2 dB.

    “a linear dynamic range (LDR) of ≈132.2 dB”
    • Also stated in: § DOI: 10.1002/adma.202517950 · plain
      “a linear dynamic range (LDR) of ≈132.2 dB”
    • Also stated in: § 2.2. Light Sensing Capability of Quasi-Epitaxial PPMC HJ Devices · plain
      “the LDR ex-tends significantly to 132.2 dB”
    Quote in the paperSubstantial claim
  • Findingown data

    The PPMC HJ device exhibits an open-circuit photovoltage of ≈0.7 V.

    “an open-circuit photovoltage of ≈0.7 V”
    • Also stated in: § DOI: 10.1002/adma.202517950 · plain
      “an open-circuit photovoltage of ≈0.7 V”
    • Also stated in: § 2.2. Light Sensing Capability of Quasi-Epitaxial PPMC HJ Devices · plain
      “an open-circuit voltage (V OC ) of ≈0.7 V”
    Quote in the paperSubstantial claim
  • Findingown data

    The PPMC HJ device exhibits an ultra-low dark current below 10 fA at room temperature.

    “an ultra-low dark current of below 10 fA at room temperature”
    • Also stated in: § DOI: 10.1002/adma.202517950 · plain
      “an ultra-low dark current below 10 fA at room temperature”
    • Also stated in: § 2.2. Light Sensing Capability of Quasi-Epitaxial PPMC HJ Devices · hedged
      “the dark current (I dark ) is recorded about as low as 10 fA at room temperature”
    Quote in the paperSubstantial claim
  • Findingown data

    The PPMC HJ device exhibits a short-circuit current density (JSC) of 4 mA cm^-2.

    “a short-circuit current density (J SC ) of 4 mA cm -2”
    Quote in the paperNot a substantial claim
  • May combine two claims. 22
  • Classified as probably not a substantial claim. 6
  • The quote only partly states this claim. 1

  • May combine two claims.

    Findingown data

    Under reverse bias, the PPMC HJ device behaves as a current source (I Ph) with saturation photocurrent directly dependent on light intensity.

    “As illustrated in Figure 2b, the PPMC HJ device behaves as a current source (I Ph ) under reverse bias, with saturation photocurrent directly dependent on the light intensity.”
    Quote in the paperSubstantial claim
    • The authors state this as an assumption: The PPMC HJ device can be represented by a photovoltaic-cell-like equivalent circuit consisting of a heterojunction diode in parallel with a current source and a series resistance.

  • Classified as probably not a substantial claim.

    Findingnone given

    The dark current-voltage relation of the PPMC HJ device is adequately expressed by Equation (1).

    “Therefore, the relation between the applied voltage (V) and the measured current (I) of our device in the dark can be expressed adequately by Equation ( 1) below (Section S4, Supporting Information).”
    Quote in the paperSubstantial claim
    • The authors state this as an assumption: The PPMC HJ device can be represented by a photovoltaic-cell-like equivalent circuit consisting of a heterojunction diode in parallel with a current source and a series resistance.

  • May combine two claims.

    Findingown data

    Under +1.0 V bias in the dark, the VSP polarity flipped and gradually increased to +250 mV, remaining positive even after returning the bias to 0 V.

    “Under +1.0 V, the V SP polarity flipped and gradually increased to +250 mV, remaining positive even after returning the bias to 0 V.”
    Quote in the paperSubstantial claim

  • May combine two claims.

    Findingreasoning

    Under illumination, rectification of the PPMC HJ device was significantly suppressed and photoconduction was enhanced.

    “Consequently, rectification was significantly suppressed, and photoconduction was enhanced.”
    Quote in the paperSubstantial claim

  • May combine two claims.

    Findingreasoning

    Upon illumination with a 532 nm laser, oscillations appear at the output, with frequency increasing as a function of incident power (P in).

    “Upon illumination with a 532 nm laser, oscillations appear at the output, with frequency increasing as a function of incident power (P in ).”
    Quote in the paperSubstantial claim
    • The authors state this as an assumption: The PPMC HJ device can be represented by a photovoltaic-cell-like equivalent circuit consisting of a heterojunction diode in parallel with a current source and a series resistance.

  • May combine two claims.

    Findingown data

    Under illumination, a distinct contrast emerges at the P3HT/CsPbBr3 interface, absent in the dark, indicating photoinduced exciton dissociation and charge redistribution.

    “Under illumination, a distinct contrast emerges at the interface, absent in the dark, underscoring photoinduced exciton dissociation and charge redistribution.”
    Quote in the paperSubstantial claim

  • May combine two claims.

    Findingown data

    A prominent charge-neutral region at the junction, dominant under dark conditions, is substantially suppressed under illumination, promoting efficient exciton dissociation.

    “a prominent chargeneutral region at the junction, dominant under dark conditions, is substantially suppressed under illumination, thus promoting efficient exciton dissociation”
    Quote in the paperSubstantial claim

  • Classified as probably not a substantial claim. May combine two claims.

    Findingreasoning

    In dark conditions, V in remains below V R, leading to a constant output V out = -V sat due to negligible photocurrent (I Ph ≈ 0).

    “In dark conditions, V in remains below V R , leading to a constant output V out = -V sat due to negligible photocurrent (I Ph ≈ 0).”
    Quote in the paperSubstantial claim
    • The authors state this as an assumption: The PPMC HJ device can be represented by a photovoltaic-cell-like equivalent circuit consisting of a heterojunction diode in parallel with a current source and a series resistance.

  • The quote only partly states this claim.

    Findingown data

    The PPMC HJ device yielded a specific detectivity of ≈3.17 × 10^12 Jones at 532 nm.

    “The PPMC HJ device yielded a detectivity of ≈3.17 × 10 12 Jones”
    Quote in the paperSubstantial claim

  • Classified as probably not a substantial claim. May combine two claims.

    Findingreasoning

    When V in < V R, V out remains at -V sat; as V in crosses V R, the output flips to +V sat and V in continues rising until it reaches V on ≈0.62 V.

    “When V in < V R , V out remains at -V sat ; as V in crosses V R , the output flips to + V sat and V in continues rising until it reaches V on ≈0.62 V.”
    Quote in the paperSubstantial claim
    • The authors state this as an assumption: The PPMC HJ device can be represented by a photovoltaic-cell-like equivalent circuit consisting of a heterojunction diode in parallel with a current source and a series resistance.

  • Classified as probably not a substantial claim.

    Findingreasoning

    The growth extension of CPB MC over the P3HT site connects the ITO terminals on either side of the pad-S, resulting in a two-terminal ITO/P3HT/CPB MC/ITO HJ photodetector.

    “The growth extension of CPB MC over the P3HT site connects the ITO terminal on either side of the pad-S which resulting in a two-terminal device, i.e., ITO/P3HT/CPB MC/ITO HJ photodetector.”
    Quote in the paperSubstantial claim

  • May combine two claims.

    Findingreasoning

    The measured slope translates to a responsivity of ≈280 mA W -1, consistent with the order of calculated values from optoelectronic measurements.

    “This translates to a responsivity of ≈280 mA W -1 , which is consistent with the order of calculated values from optoelectronic measurements (Figure S11, Supporting Information).”
    Quote in the paperNot a substantial claim
    • The authors state this as an assumption: The PPMC HJ device can be represented by a photovoltaic-cell-like equivalent circuit consisting of a heterojunction diode in parallel with a current source and a series resistance.

  • May combine two claims.

    Findingown data

    A linear relationship was observed between output frequency (f) and P in, with a measured slope of ≈45 Hz nW -1.

    “As shown in Figure 5e, we observed a linear relationship between the output frequency (f) and P in , with a measured slope of ≈45 Hz nW -1 .”
    Quote in the paperSubstantial claim
    • The authors state this as an assumption: The PPMC HJ device can be represented by a photovoltaic-cell-like equivalent circuit consisting of a heterojunction diode in parallel with a current source and a series resistance.

  • Classified as probably not a substantial claim.

    Premisecitation

    The precise engineering of the organic-inorganic interface determines the efficiency of charge injection and extraction, dictating the overall performance of photonic and electronic devices.

    “The precise engineering of their (organic-inorganic) interface determines the efficiency of charge injection and extraction, dictating the overall performance of photonic and electronic devices.[9]”
    Quote in the paperSubstantial claim0 of 1 sources checked
    • cites [9] 9. J. O. Obila, D.u H. Ryu, S. Oh, J. H. Kim, R. J. Musembi, S. Lee, B. J. Kang, N. J. Jeon, E. O. Ayieta, S. H. Im, C. E. Song, ACS Energy Lett. 2024, 9, 1090.

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

  • May combine two claims.

    Premisecitation

    The quasiepitaxial integration of organic polymer with inorganic halide perovskite microcrystal enables tunable material properties, improved exciton dissociation, and enhanced charge transport dynamics.

    “The quasiepitaxial integration of organic polymer with inorganic halide perovskite microcrystal with high precision presents a transformative approach in developing next-generation optoelectronics, offering tunable material properties, improved exciton dissociation, and enhanced charge transport dynamics.[1][2][3][4]”
    Quote in the paperSubstantial claim0 of 1 sources checked
    • cites [1][2][3][4]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

  • May combine two claims.

    Interpretationown data

    The disparity in energy shifts suggests interfacial charge transfer, whereby photo-generated holes migrate from CsPbBr3 to P3HT, resulting in a shared modulation of their work functions.

    “This disparity strongly suggests interfacial charge transfer, whereby photo-generated holes migrate from CsPbBr 3 to P3HT, resulting in a shared modulation of their work functions.”
    Quote in the paperSubstantial claim

  • Classified as probably not a substantial claim. May combine two claims.

    Interpretationnone given

    The photocurrent charges C1, and the resultant voltage appears at the OP-AMP's non-inverting input.

    “The photocurrent charges C1, and the resultant voltage appears at the OP-AMP's non-inverting input.”
    Quote in the paperSubstantial claim
    • The authors state this as an assumption: The PPMC HJ device can be represented by a photovoltaic-cell-like equivalent circuit consisting of a heterojunction diode in parallel with a current source and a series resistance.

  • May combine two claims.

    Interpretationreasoning

    The amplitude of V in is modulated by photocurrent in the PPMC HJ device, which varies with incident light power (P in).

    “The amplitude of V in is modulated by photocurrent in the PPMC HJ device, which varies with incident light power (P in ).”
    Quote in the paperSubstantial claim
    • The authors state this as an assumption: The PPMC HJ device can be represented by a photovoltaic-cell-like equivalent circuit consisting of a heterojunction diode in parallel with a current source and a series resistance.

  • May combine two claims.

    Interpretationown data

    The PPMC HJ device can serve dual functionality of efficient low-intensity light sensing and simultaneous photovoltaic power generation.

    “our PPMC HJ device can also serve dual functionality, like efficient low-intense light sensing and simultaneous photovoltaic power generation”
    Quote in the paperSubstantial claim

  • May combine two claims.

    Interpretationown data

    A -1.0 V bias acts as forward biasing to the P3HT/CPB MC interface, generating polarons (P3HT+) in P3HT through oxidation and neutralizing Br- vacancies in CPB MC by a counter reduction process.

    “A -1.0 V bias acted as forward biasing to the P3HT/CPB MC interface and generates polarons (P3HT + ) in P3HT through oxidation and neutralizes Br - vacancies (V + Br ) in CPB MC by a counter reduction process”
    Quote in the paperSubstantial claim

  • May combine two claims.

    Interpretationown data

    The dark-condition observations support the presence of rectification behavior, consistent with the recorded dark current characteristics.

    “These dark-condition observations strongly support the presence of rectification behavior, consistent with the recorded dark current characteristics of our device.”
    Quote in the paperSubstantial claim

  • May combine two claims.

    Interpretationcitation

    Br- ion migrations result in the formation of Br-vacancies, which create trap states within the forbidden energy gap just below EC, acting as electron trapping centers and facilitating hole concentration under illumination, thereby modifying the material's work function.

    “These migrations result in the formation of Br -vacancies, which arises trap states within the forbidden energy gap, located just be-low the E C , which act as electron trapping centers and facilitate hole concentration under illumination, thereby modifying the material's work function”
    Quote in the paperSubstantial claim0 of 2 sources checked
    • cites [39] 39. B. Hu, T. Zhang, L. Li, H. Ning, G. Min, T. Wang, M. Chen, J. Pan, N. Xu, T. J. Macdonald, F. Gao, I. Levine, Z. Chen, A. A. Bakulin, Adv. Mater. 2025, 37, 2502160.

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

    • cites [40] 40. J. Ran, B. Wang, Y. Wu, D. Liu, C. Mora Perez, A. S. Vasenko, O. V. Prezhdo, J. Phys. Chem. Lett. 2023, 14, 6028.

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

  • May combine two claims.

    Interpretationown data

    The hysteresis is indicative of Br- ion migration, enabled by thermal energy (≈26 meV) exceeding the migration activation threshold (24 meV).

    “This is indicative of Br - ion migration, enabled by thermal energy (≈26 meV) exceeding the migration activation threshold (24 meV).[36][37][38]”
    Quote in the paperSubstantial claim0 of 1 sources checked
    • cites [36][37][38]

      Couldn’t be matched to a paper in Crossref, so it can’t be checked.

  • May combine two claims.

    Interpretationown data

    A +1.0 V bias led to reverse biasing of the interface, with an observable widening of the depletion region due to Br- ion migration away from the interface.

    “a +1.0 V bias led to reverse biasing of the interface, with an observable widening of the depletion region due to Br -ion migration away from the interface”
    Quote in the paperSubstantial claim

  • May combine two claims.

    Interpretationown data

    The device's real-world applicability was validated by integrating it into a comparator-based LISF converter circuit, demonstrating its potential for wireless optical communication systems.

    “the device's real-world applicability was validated by integrating it into a comparator-based LISF converter circuit, demonstrating its potential for wireless optical communication systems.”
    Quote in the paperSubstantial claim

  • May combine two claims.

    Interpretationreasoning

    At V on ≈0.62 V, the feedback transistor is activated by the output +V sat, rapidly discharging C1 and forcing V out back to -V sat, completing one oscillation cycle.

    “At this point, the feedback transistor is activated by the output + V sat , rapidly discharging C1, and forcing V out back to -V sat , thus completing one oscillation cycle.”
    Quote in the paperSubstantial claim
    • The authors state this as an assumption: The PPMC HJ device can be represented by a photovoltaic-cell-like equivalent circuit consisting of a heterojunction diode in parallel with a current source and a series resistance.
26 of 26

  • The authors state this as an assumption.

    The PPMC HJ device can be represented by a photovoltaic-cell-like equivalent circuit consisting of a heterojunction diode in parallel with a current source and a series resistance.

    “a simple circuit model is proposed for our PPMC HJ device, shown schematically, considering a parallel combination of a heterojunction diode (D HJ ) and a current source (I Ph ) connecting with a series resistance (R s ) (Figure 5a).”
1 of 1

Self-check

Percentages, sums and reported differences re-computed from the paper’s own numbers.

Each contradiction between two passages listed here was confirmed by an independent check.

  • Detection claim falls below the stated minimum detectable power

    Minor

    The paper defines NEP as the minimum detectable power at a signal-to-noise ratio of one and reports 108.6 fW. That does not support its claim of detecting signals as weak as a few femtowatts.

  • The stated conductivity ratio is inverted

    Minor

    The paper reports a dark-to-light ratio above one million, but its measured current-density ratio is light-to-dark and exceeds one million. Under the same bias, those ratios are reciprocals, not both greater than one million.

2 of 2

Cites

Flagged first, then by citations

Research works printed but not linked: 1

  1. P.Eligiusz 13th International Scientific Conf. on Optical Sensors and Electronic Sensors Lodz Poland August2014.

Cited by

Sorted by citations

Related

Authors
Sathyanarayana, S., & Das, B. C.
Affiliations
Indian Institute of Science Education and Research Thiruvananthapuram (IN)
Corresponding author
Das, Bikas C.
ORCID
Das, Bikas C.
Venue
Advanced Materials
Publisher
Wiley
Published
2025-11-17
Volume
38
Issue
7
Pages
e17950-e17950
ISSN
  • 0935-9648 (ISSN-L)
  • 1521-4095
DOI
10.1002/adma.202517950
OpenAlex
W4416292887
Cited by
7
References
44
Citations by year
2026: 7
FWCI
1.56
Type
journal article
Language
en
Open access
Licence
Locations
  • Advanced Materials (publishedVersion)
  • PubMed (publishedVersion)
Funders
  • Arthritis National Research Foundation
  • Council of Scientific and Industrial Research, India
  • Science and Engineering Research Board (CRG/2021/000567, EEQ/2021/000810)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Perovskite Materials and Applications
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Organic Electronics and Photovoltaics
  • Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
Keywords
CsPbBr3 perovskite, poly(3-hexylthiophene), hybrid photodetectors, optical communication, interfacial energy barrier, dark current

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Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Claims read by deepseek-v4.1-flash under definition version 3 (extract-v3) on 2026-10-11.

Classified by jev-1.13-20260917 (gold-guideline-v0.2) on 2026-10-11.

Statistics and arithmetic are recomputed, not judged.

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