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High Current Density in Monolayer MoS2 Doped by AlOx
Open accessAbstract
Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, where existing approaches are either incompatible with conventional semiconductor processing or introduce time-dependent, hysteretic behavior. Here we show that low-temperature (<200 °C) substoichiometric AlO x provides a stable n -doping layer for monolayer MoS 2, compatible with circuit integration. This approach achieves carrier densities >2 × 10 13 cm –2, sheet resistance as low as ∼7 kΩ/□, and good contact resistance ∼480 Ω·μm in transistors from monolayer MoS 2 grown by chemical vapor deposition. We also reach record current density of nearly 700 μA/μm (>110 MA/cm 2 ) along this three-atom-thick semiconductor while preserving transistor on/off current ratio >10 6 . The maximum current is ultimately limited by self-heating (SH) and could exceed 1 mA/μm with better device heat sinking. With their 0.1 nA/μm off-current, such doped MoS 2 devices approach several low-power transistor metrics required by the international technology roadmap.
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Metadata
- Authors
- McClellan, C. J., Yalon, E., Smithe, K. K. H., Suryavanshi, S. V., & Pop, E.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2021-01-06
- Volume
- 15
- Issue
- 1
- Pages
- 1587-1596
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W3119675150
- Cited by
- 267
- References
- 53
- FWCI
- 11.79
- Type
- journal article
- Language
- en
- Open access
- green
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