The DOI matches its Crossref record; 40 of the 40 references it cites were found in a registry or an index.
High-Responsivity, High-Detectivity, Ultrafast Topological Insulator Bi2Se3/Silicon Heterostructure Broadband Photodetectors
Abstract
As an exotic state of quantum matter, topological insulators have promising applications in new-generation electronic and optoelectronic devices. The realization of these applications relies critically on the preparation and properties understanding of high-quality topological insulators, which however are mainly fabricated by high-cost methods like molecular beam epitaxy. We here report the successful preparation of high-quality topological insulator Bi2Se3/Si heterostructure having an atomically abrupt interface by van der Waals epitaxy growth of Bi2Se3 films on Si wafer. A simple, low-cost physical vapor deposition (PVD) method was employed to achieve the growth of the Bi2Se3 films. The Bi2Se3/Si heterostructure exhibited excellent diode characteristics with a pronounced photoresponse under light illumination. The built-in potential at the Bi2Se3/Si interface greatly facilitated the separation and transport of photogenerated carriers, enabling the photodetector to have a high light responsivity of 24.28 A W(-1), a high detectivity of 4.39 × 10(12) Jones (Jones = cm Hz(1/2) W(-1)), and a fast response speed of aproximately microseconds. These device parameters represent the highest values for topological insulator-based photodetectors. Additionally, the photodetector possessed broadband detection ranging from ultraviolet to optical telecommunication wavelengths. Given the simple device architecture and compatibility with silicon technology, the topological insulator Bi2Se3/Si heterostructure holds great promise for high-performance electronic and optoelectronic applications.
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Citations
Cites
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Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
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Self-citationPhotodetectors based on graphene, other two-dimensional materials and hybrid systems
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Ultrafast graphene photodetector
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Hybrid graphene–quantum dot phototransistors with ultrahigh gain
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Graphene photodetectors with ultra-broadband and high responsivity at room temperature
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Self-citationHigh-responsivity graphene/silicon-heterostructure waveguide photodetectors
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Self-citationControl over topological insulator photocurrents with light polarization
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Raman Spectroscopy of Few-Quintuple Layer Topological Insulator Bi2Se3 Nanoplatelets
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Cited by
Zeng, L., Wu, D., Jie, J., Ren, X., Hu, X., Lau, S. P., Chai, Y., & Tsang, Y. H. (2020) · Advanced Materials · doi:10.1002/adma.202004412 · Cited by 419
Self-citation2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics
Zhou, X., Hu, X., Yu, J., Liu, S., Shu, Z., Zhang, Q., Li, H., Ma, Y., Xu, H., & Zhai, T. (2018) · Advanced Functional Materials · doi:10.1002/adfm.201706587 · Cited by 408
Yang, W., Chen, J., Zhang, Y., Zhang, Y., He, J., & Fang, X. (2019) · Advanced Functional Materials · doi:10.1002/adfm.201808182 · Cited by 294
Metadata
- Authors
- Zhang, H., Zhang, X., Liu, C., Lee, S.-T., & Jie, J.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2016-05-02
- Volume
- 10
- Issue
- 5
- Pages
- 5113-5122
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2344249301
- Cited by
- 408
- References
- 40
- FWCI
- 15.43
- Type
- journal article
- Language
- en
- Open access
- closed
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