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Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
Abstract
ADVERTISEMENT RETURN TO ISSUEPREVReviewBand Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and InterfacesZhen Zhang and John T. Yates, Jr.*View Author Information Department of Chemistry, University of Virginia, Charlottesville, Virginia 22904, United States*E-mail: [email protected]Cite this: Chem. Rev. 2012, 112, 10, 5520–5551Publication Date (Web):July 11, 2012Publication History Received15 February 2012Published online11 July 2012Published inissue 10 October 2012https://pubs.acs.org/doi/10.1021/cr3000626https://doi.org/10.1021/cr3000626review-articleACS PublicationsCopyright © 2012 American Chemical SocietyRequest reuse permissionsArticle Views64127Altmetric-Citations1952LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail Other access optionsGet e-Alertsclose SUBJECTS:Layers,Metals,Molecules,Oxides,Semiconductors Get e-Alerts
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Metadata
- Authors
- Zhang, Z., & Yates, J. T.
- Venue
- Chemical Reviews
- Publisher
- American Chemical Society (ACS)
- Published
- 2012-07-11
- Volume
- 112
- Issue
- 10
- Pages
- 5520-5551
- ISSN
- 0009-2665 (ISSN-L)
- 1520-6890
- OpenAlex
- W2066151171
- Cited by
- 2,594
- References
- 126
- FWCI
- 5.13
- Type
- journal article
- Language
- en
- Open access
- closed
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