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Cited by 450

The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.

Stable, Solution-Processed, High-Mobility ZnO Thin-Film Transistors

Ong, Beng S., Li, Chensha, Li, Yuning, Wu, Yiliang, Loutfy, Rafik·2007·Journal of the American Chemical Society

Abstract

A stable, high-mobility ZnO thin-film semiconductor was fabricated by thermal treatment of a solution-deposited thin film from a solution of Zn(OAc) 2 /2-ethanolamine in methoxyethanol. This ZnO thin-film semiconductor was composed of closely packed ZnO single crystals (∼30 to 50 nm) having a hexagonal structure assuming a preferred orientation with its c -axis perpendicular to the substrate. Field-effect mobility of 5−6 cm 2 V -1 s -1 and current on-to-off ratio of 10 5 −10 6 were demonstrated with this ZnO thin-film semiconductor in thin-film transistors.

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Crossref · 10.1021/ja068876e

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Metadata

Authors
Ong, B. S., Li, C., Li, Y., Wu, Y., & Loutfy, R.
Venue
Journal of the American Chemical Society
Published
2007-02-14
Volume
129
Issue
10
Pages
2750-2751
ISSN
  • 0002-7863 (ISSN-L)
  • 1520-5126
OpenAlex
W2035759921
Cited by
450
References
6
FWCI
28.98
Type
journal article
Language
en
Open access
closed

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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.