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Control of Electronic Structure of Graphene by Various Dopants and Their Effects on a Nanogenerator
Abstract
It is essential to control the electronic structure of graphene in order to apply graphene films for use in electrodes. We have introduced chemical dopants that modulate the electronic properties of few-layer graphene films synthesized by chemical vapor deposition. The work function, sheet carrier density, mobility, and sheet resistance of these films were systematically modulated by the reduction potential values of dopants. We further demonstrated that the power generation of a nanogenerator was strongly influenced by the choice of a graphene electrode with a modified work function. The off-current was well quenched in graphene films with high work functions (Au-doped) due to the formation of high Schottky barrier heights, whereas leakage current was observed in graphene films with low work functions (viologen-doped), due to nearly ohmic contact.
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Metadata
- Authors
- Shin, H.-J., Choi, W. M., Choi, D., Han, G. H., Yoon, S.-M., Park, H.-K., Kim, S.-W., Jin, Y. W., Lee, S. Y., Kim, J. M., Choi, J.-Y., & Lee, Y. H.
- Venue
- Journal of the American Chemical Society
- Publisher
- American Chemical Society (ACS)
- Published
- 2010-10-14
- Volume
- 132
- Issue
- 44
- Pages
- 15603-15609
- ISSN
- 0002-7863 (ISSN-L)
- 1520-5126
- OpenAlex
- W2066879133
- Cited by
- 261
- References
- 41
- FWCI
- 8.80
- Type
- journal article
- Language
- en
- Open access
- closed
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