The DOI matches its Crossref record; 30 of the 30 references it cites were found in a registry or an index.
Temperature-Dependent Raman Studies and Thermal Conductivity of Few-Layer MoS2
Open accessAbstract
We report on the temperature dependence of in-plane E 2g and out-of-plane A 1g Raman modes in high-quality few-layer MoS 2 (FLMS) prepared using a high-temperature vapor-phase method. The materials obtained were investigated using transmission electron microscopy. The frequencies of these two phonon modes were found to vary linearly with temperature. The first-order temperature coefficients for E 1 2g and A 1g modes were found to be (1.32 and 1.23) × 10 –2 cm –1 /K, respectively. The thermal conductivity of the suspended FLMS at room temperature was estimated to be ∼52 W/mK.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
Mak, K. F., Lee, C., Hone, J., Shan, J., & Heinz, T. F. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.136805 · Cited by 15,586
Superior Thermal Conductivity of Single-Layer Graphene
Balandin, A. A., Ghosh, S., Bao, W., Calizo, I., Teweldebrhan, D., Miao, F., & Lau, C. N. (2008) · Nano Letters · doi:10.1021/nl0731872 · Cited by 13,823
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Emerging Photoluminescence in Monolayer MoS2
Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C.-Y., Galli, G., & Wang, F. (2010) · Nano Letters · doi:10.1021/nl903868w · Cited by 9,501
Ultrahigh electron mobility in suspended graphene
Bolotin, K. I., Sikes, K. J., Jiang, Z., Klima, M., Fudenberg, G., Hone, J., Kim, P., & Stormer, H. L. (2008) · Solid State Communications · doi:10.1016/j.ssc.2008.02.024 · Cited by 8,057
Boron nitride substrates for high-quality graphene electronics
Dean, C. R., Young, A. F., Meric, I., Lee, C., Wang, L., Sorgenfrei, S., Watanabe, K., Taniguchi, T., Kim, P., Shepard, K. L., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.172 · Cited by 7,124
From Bulk to Monolayer MoS2: Evolution of Raman Scattering
Li, H., Zhang, Q., Yap, C. C. R., Tay, B. K., Edwin, T. H. T., Olivier, A., & Baillargeat, D. (2012) · Advanced Functional Materials · doi:10.1002/adfm.201102111 · Cited by 4,249
Half-metallic graphene nanoribbons
Son, Y.-W., Cohen, M. L., & Louie, S. G. (2006) · Nature · doi:10.1038/nature05180 · Cited by 4,197
Wilson, J. A., & Yoffe, A. D. (1969) · Advances in Physics · doi:10.1080/00018736900101307 · Cited by 4,090
Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition
Lee, Y., Zhang, X., Zhang, W., Chang, M., Lin, C., Chang, K., Yu, Y., Wang, J. T., Chang, C., Li, L., et al. (2012) · Advanced Materials · doi:10.1002/adma.201104798 · Cited by 3,422
Valley-selective circular dichroism of monolayer molybdenum disulphide
Cao, T., Wang, G., Han, W., Ye, H., Zhu, C., Shi, J., Niu, Q., Tan, P., Wang, E., Liu, B., et al. (2012) · Nature Communications · doi:10.1038/ncomms1882 · Cited by 2,605
Loudon, R. (1964) · Advances in Physics · doi:10.1080/00018736400101051 · Cited by 2,388
Two-Dimensional Phonon Transport in Supported Graphene
Seol, J. H., Jo, I., Moore, A. L., Lindsay, L., Aitken, Z. H., Pettes, M. T., Li, X., Yao, Z., Huang, R., Broido, D., et al. (2010) · Science · doi:10.1126/science.1184014 · Cited by 1,926
Large‐Area Vapor‐Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate
Zhan, Y., Liu, Z., Najmaei, S., Ajayan, P. M., & Lou, J. (2012) · Small · doi:10.1002/smll.201102654 · Cited by 1,741
Integrated Circuits Based on Bilayer MoS2 Transistors
Wang, H., Yu, L., Lee, Y.-H., Shi, Y., Hsu, A., Chin, M. L., Li, L.-J., Dubey, M., Kong, J., & Palacios, T. (2012) · Nano Letters · doi:10.1021/nl302015v · Cited by 1,738
Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure
Kubota, Y., Watanabe, K., Tsuda, O., & Taniguchi, T. (2007) · Science · doi:10.1126/science.1144216 · Cited by 1,249
Temperature Dependence of the Raman Spectra of Graphene and Graphene Multilayers
Calizo, I., Balandin, A. A., Bao, W., Miao, F., & Lau, C. N. (2007) · Nano Letters · doi:10.1021/nl071033g · Cited by 1,226
Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
Ghatak, S., Pal, A. N., & Ghosh, A. (2011) · ACS Nano · doi:10.1021/nn202852j · Cited by 865
Menéndez, J., & Cardona, M. (1984) · Physical Review B · doi:10.1103/physrevb.29.2051 · Cited by 811
Thermal Conductivity and Phonon Transport in Suspended Few-Layer Hexagonal Boron Nitride
Jo, I., Pettes, M. T., Kim, J., Watanabe, K., Taniguchi, T., Yao, Z., & Shi, L. (2013) · Nano Letters · doi:10.1021/nl304060g · Cited by 770
Lee, K. H., Shin, H.-J., Lee, J., Lee, I.-Y., Kim, G.-H., Choi, J.-Y., & Kim, S.-W. (2012) · Nano Letters · doi:10.1021/nl203635v · Cited by 560
MoS2 and WS2 Analogues of Graphene
Ramakrishna Matte, H. S. S., Gomathi, A., Manna, A. K., Late, D. J., Datta, R., Pati, S. K., & Rao, C. N. R. (2010) · Angewandte Chemie · doi:10.1002/ange.201000009 · Cited by 468
A Comparative Study of Lattice Dynamics of Three- and Two-Dimensional MoS2
Ataca, C., Topsakal, M., Aktürk, E., & Ciraci, S. (2011) · The Journal of Physical Chemistry C · doi:10.1021/jp205116x · Cited by 353
Anisotropic Thermal Conductivity of Pyrolytic Graphite
Slack, G. A. (1962) · Physical Review · doi:10.1103/physrev.127.694 · Cited by 277
Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes
Plechinger, G., Heydrich, S., Eroms, J., Weiss, D., Schüller, C., & Korn, T. (2012) · Applied Physics Letters · doi:10.1063/1.4751266 · Cited by 202
Silicon Nitride Gate Dielectrics and Band Gap Engineering in Graphene Layers
Zhu, W., Neumayer, D. A., Perebeinos, V., & Avouris, P. (2010) · Nano Letters · doi:10.1021/nl101832y · Cited by 154
Laser-Power-Induced Multiphonon Resonant Raman Scattering in Laser-Heated CdS Nanocrystal
Sahoo, S., & Arora, A. (2010) · The Journal of Physical Chemistry B · doi:10.1021/jp912103t · Cited by 28
Self-citation
Cited by
Zhang, S., Yang, J., Xu, R., Wang, F., Li, W., Ghufran, M., Zhang, Y.-W., Yu, Z., Zhang, G., Qin, Q., et al. (2014) · ACS Nano · doi:10.1021/nn503893j · Cited by 688
UV-Activated MoS2 Based Fast and Reversible NO2 Sensor at Room Temperature
Kumar, R., Goel, N., & Kumar, M. (2017) · ACS Sensors · doi:10.1021/acssensors.7b00731 · Cited by 490
Recent Progress of Two-Dimensional Thermoelectric Materials
Li, D., Gong, Y., Chen, Y., Lin, J., Khan, Q., Zhang, Y., Li, Y., Zhang, H., & Xie, H. (2020) · Nano-Micro Letters · doi:10.1007/s40820-020-0374-x · Cited by 429
All Chemical Vapor Deposition Growth of MoS2:h-BN Vertical van der Waals Heterostructures
Wang, S., Wang, X., & Warner, J. H. (2015) · ACS Nano · doi:10.1021/acsnano.5b00655 · Cited by 389
Zhang, X., Sun, D., Li, Y., Lee, G.-H., Cui, X., Chenet, D., You, Y., Heinz, T. F., & Hone, J. C. (2015) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.5b08580 · Cited by 369
Metadata
- Authors
- Sahoo, S., Gaur, A. P. S., Ahmadi, M., Guinel, M. J.-F., & Katiyar, R. S.
- Venue
- The Journal of Physical Chemistry C
- Publisher
- American Chemical Society (ACS)
- Published
- 2013-04-24
- Volume
- 117
- Issue
- 17
- Pages
- 9042-9047
- ISSN
- 1932-7447 (ISSN-L)
- 1932-7455
- OpenAlex
- W2043184042
- Cited by
- 710
- References
- 30
- FWCI
- 20.87
- Type
- journal article
- Language
- en
- Open access
- green
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.