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Cited by 680

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Surface Chemistry for Atomic Layer Growth

George, S. M., Ott, A. W., Klaus, J. W.·1996·The Journal of Physical Chemistry

Abstract

Atomic layer controlled film growth is an important technological and scientific goal that is closely tied to many issues in surface chemistry. This article first reviews the basic concepts of atomic layer growth using molecular precursors and binary reaction sequence chemistry. Many examples are given for the various films that have been grown using this atomic layer growth technique. The paradigms for atomic layer epitaxy (ALE) and atomic layer processing (ALP) are then discussed in terms of self-limiting surface reactions. Recent investigations of the surface chemistry of SiO 2 and Al 2 O 3 ALP and GaAs ALE are examined and used to illustrate the possible mechanisms of atomic layer growth. Subsequently, the characteristics of film deposition using atomic layer growth techniques are explored using recent examples for Al 2 O 3 ALP. The structure of the deposited films is also reviewed using results from previous Al 2 O 3 deposition investigations. This article then concludes by discussing possible complications to studies of atomic layer controlled growth using binary reaction sequence chemistry.

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Metadata

Authors
George, S. M., Ott, A. W., & Klaus, J. W.
Venue
The Journal of Physical Chemistry
Published
1996-01-01
Volume
100
Issue
31
Pages
13121-13131
ISSN
  • 0022-3654 (ISSN-L)
  • 1541-5740
OpenAlex
W1993243846
Cited by
680
References
0
FWCI
11.16
Type
journal article
Language
en
Open access
closed

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.