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Cited by 401

The DOI matches its Crossref record; 19 of the 19 references it cites were found in a registry or an index.

Very High Frequency Silicon Nanowire Electromechanical Resonators

Feng, X. L., He, Rongrui, Yang, Peidong, Roukes, M. L.·2007·Nano Letters

Abstract

We demonstrate very high frequency (VHF) nanomechanical resonators based upon single-crystal silicon nanowires (SiNWs), which are prepared by the bottom-up chemical synthesis. Metallized SiNW resonators operating near 200 MHz are realized with quality factor Q ≈ 2000−2500. Pristine SiNWs, with fundamental resonances as high as 215 MHz, are measured using a VHF readout technique that is optimized for these high resistance devices. The pristine resonators provide the highest Q 's, as high as Q ≈ 13 100 for an 80 MHz device. SiNWs excel at mass sensing; characterization of their mass responsivity and frequency stability demonstrates sensitivities approaching 10 zeptograms. These SiNW resonators offer significant potential for applications in resonant sensing, quantum electromechanical systems, and high frequency signal processing.

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Metadata

Authors
Feng, X. L., He, R., Yang, P., & Roukes, M. L.
Venue
Nano Letters
Published
2007-06-22
Volume
7
Issue
7
Pages
1953-1959
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2103114895
Cited by
401
References
19
FWCI
27.41
Type
journal article
Language
en
Open access
closed

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