The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Direct Formation of Wafer Scale Graphene Thin Layers on Insulating Substrates by Chemical Vapor Deposition
Abstract
Direct formation of high-quality and wafer scale graphene thin layers on insulating gate dielectrics such as SiO(2) is emergent for graphene electronics using Si-wafer compatible fabrication. Here, we report that in a chemical vapor deposition process the carbon species dissociated on Cu surfaces not only result in graphene layers on top of the catalytic Cu thin films but also diffuse through Cu grain boundaries to the interface between Cu and underlying dielectrics. Optimization of the process parameters leads to a continuous and large-area graphene thin layers directly formed on top of the dielectrics. The bottom-gated transistor characteristics for the graphene films have shown quite comparable carrier mobility compared to the top-layer graphene. The proposed method allows us to achieve wafer-sized graphene on versatile insulating substrates without the need of graphene transfer.
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Cites
The electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
Fine Structure Constant Defines Visual Transparency of Graphene
Nair, R. R., Blake, P., Grigorenko, A. N., Novoselov, K. S., Booth, T. J., Stauber, T., Peres, N. M. R., & Geim, A. K. (2008) · Science · doi:10.1126/science.1156965 · Cited by 9,084
Cited by
Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition
Lee, Y., Zhang, X., Zhang, W., Chang, M., Lin, C., Chang, K., Yu, Y., Wang, J. T., Chang, C., Li, L., et al. (2012) · Advanced Materials · doi:10.1002/adma.201104798 · Cited by 3,422
Self-citationUltrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures
Zhang, W., Chuu, C.-P., Huang, J.-K., Chen, C.-H., Tsai, M.-L., Chang, Y.-H., Liang, C.-T., Chen, Y.-Z., Chueh, Y.-L., He, J.-H., et al. (2014) · Scientific Reports · doi:10.1038/srep03826 · Cited by 911
Self-citationGraphene transfer: key for applications
Kang, J., Shin, D., Bae, S., & Hong, B. H. (2012) · Nanoscale · doi:10.1039/c2nr31317k · Cited by 474
Large‐Size Growth of Ultrathin SnS2 Nanosheets and High Performance for Phototransistors
Zhou, X., Zhang, Q., Gan, L., Li, H., & Zhai, T. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201600318 · Cited by 361
Growth of epitaxial graphene: Theory and experiment
Tetlow, H., Posthuma de Boer, J., Ford, I. J., Vvedensky, D. D., Coraux, J., & Kantorovich, L. (2014) · Physics Reports · doi:10.1016/j.physrep.2014.03.003 · Cited by 274
Metadata
- Authors
- Su, C.-Y., Lu, A.-Y., Wu, C.-Y., Li, Y.-T., Liu, K.-K., Zhang, W., Lin, S.-Y., Juang, Z.-Y., Zhong, Y.-L., Chen, F.-R., & Li, L.-J.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2011-08-15
- Volume
- 11
- Issue
- 9
- Pages
- 3612-3616
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2019126372
- Cited by
- 322
- References
- 2
- FWCI
- 15.96
- Type
- journal article
- Language
- en
- Open access
- closed
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