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Gate-Activated Photoresponse in a Graphene p–n Junction
Open accessAbstract
We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed, allowing on-off control of photodetection. Photocurrents generated near p-n junctions do not require biasing and can be realized using submicrometer gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.
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Metadata
- Authors
- Lemme, M. C., Koppens, F. H. L., Falk, A. L., Rudner, M. S., Park, H., Levitov, L. S., & Marcus, C. M.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2011-09-12
- Volume
- 11
- Issue
- 10
- Pages
- 4134-4137
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2023261624
- Cited by
- 423
- References
- 4
- FWCI
- 15.34
- Type
- journal article
- Language
- en
- Open access
- green
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