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Cited by 590

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Doping Monolayer Graphene with Single Atom Substitutions

Wang, Hongtao, Wang, Qingxiao, Cheng, Yingchun, Li, Kun, Yao, Yingbang, Zhang, Qiang, Dong, Cezhou, Wang, Peng, Schwingenschlögl, Udo, Yang, Wei, Zhang, X. X.·2012·Nano Letters
DOI 10.1021/nl2031629
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Abstract

Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope.

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Research works printed but not linked: 41

  1. Chen J.-H., 2011, Nat. Phys., 7, 535, 10.1038/nphys1962 · DOI · Paper page
  2. Santos E. J. G., 2010, Phys. Rev. B, 81, 125433, 10.1103/PhysRevB.81.125433 · DOI
  3. Krasheninnikov A. V., 2009, Phys. Rev. Lett., 102, 126807, 10.1103/PhysRevLett.102.126807 · DOI · Paper page
  4. Cervantes-Sodi F., 2008, Phys. Rev. B, 77, 165427, 10.1103/PhysRevB.77.165427 · DOI · Paper page
  5. Yazyev O. V., 2007, Phys. Rev. B, 75, 125408, 10.1103/PhysRevB.75.125408 · DOI · Paper page
  6. Carlsson J. M., 2006, Phys. Rev. Lett., 96, 046806, 10.1103/PhysRevLett.96.046806 · DOI
  7. Neamen D. A., 2003, Semiconductor physics and devices: basic principles
  8. Lin Y.-C., 2010, Appl. Phys. Lett., 96, 133110, 10.1063/1.3368697 · DOI · Paper page
  9. Wei D., 2009, Nano Lett., 9, 1752, 10.1021/nl803279t · DOI · Paper page
  10. Meyer J. C., 2011, Nat. Mater., 10, 209, 10.1038/nmat2941 · DOI · Paper page
  11. Zhao L., 2011, Science, 333, 999, 10.1126/science.1208759 · DOI · Paper page
  12. Panchokarla L. S., 2009, Adv. Mater., 21, 4726, 10.1002/adma.200901285 · DOI · Paper page
  13. Jeong H. M., 2011, Nano Lett., 11, 2472, 10.1021/nl2009058 · DOI · Paper page
  14. Bangert U., 2010, Phys. Rev. B, 81, 245423, 10.1103/PhysRevB.81.245423 · DOI
  15. Lee C., 2008, Science, 321, 385, 10.1126/science.1157996 · DOI · Paper page
  16. Koenraad P. M., 2011, Nat. Mater., 10, 91, 10.1038/nmat2940 · DOI
  17. Chen J.-H., 2009, Phys. Rev. Lett., 102, 236805, 10.1103/PhysRevLett.102.236805 · DOI · Paper page
  18. Sengupta K., 2008, Phys. Rev. B, 77, 045417, 10.1103/PhysRevB.77.045417 · DOI
  19. Åhlgren E. H., 2011, Phys. Rev. B, 83, 115424, 10.1103/PhysRevB.83.115424 · DOI
  20. Lehtinen O., 2010, Phys. Rev. B, 81, 153401, 10.1103/PhysRevB.81.153401 · DOI · Paper page
  21. Miller J. C., 1998, Laser ablation and desorption
  22. Girit Ç. Ö., 2009, Science, 323, 1705, 10.1126/science.1166999 · DOI · Paper page
  23. Jia X., 2009, Science, 323, 1701, 10.1126/science.1166862 · DOI · Paper page
  24. Liu Z., 2009, Phys. Rev. Lett., 102, 015501, 10.1103/PhysRevLett.102.015501 · DOI · Paper page
  25. Zhang W., 2010, Phys. Rev. B, 81, 125425, 10.1103/PhysRevB.81.125425 · DOI
  26. Jin C., 2009, Phys. Rev. Lett., 102, 205501, 10.1103/PhysRevLett.102.205501 · DOI · Paper page
  27. Hashimoto A., 2004, Nature, 430, 870, 10.1038/nature02817 · DOI · Paper page
  28. Banhart F., 2011, ACS Nano, 5, 26, 10.1021/nn102598m · DOI · Paper page
  29. Esquinazi P., 2003, Phys. Rev. Lett., 91, 227201, 10.1103/PhysRevLett.91.227201 · DOI · Paper page
  30. Krasheninnikov A. V., 2010, J. Appl. Phys., 107, 071301, 10.1063/1.3318261 · DOI · Paper page
  31. Krasheninnikov A. V., 2007, Nat. Mater., 6, 723, 10.1038/nmat1996 · DOI · Paper page
  32. Cretu O., 2010, Phys. Rev. Lett., 105
  33. Rodriguez-Manzo J. A., 2009, Nano Lett., 9, 2285, 10.1021/nl900463u · DOI
  34. Banhart F., 1999, Rep. Prog. Phys., 62, 1181, 10.1088/0034-4885/62/8/201 · DOI
  35. Rodriguez-Manzo J. A., 2010, ACS Nano, 4, 3422, 10.1021/nn100356q · DOI · Paper page
  36. Terrones M., 2000, Science, 288, 1226, 10.1126/science.288.5469.1226 · DOI · Paper page
  37. Yuzvinsky T. D., 2006, Nano Lett., 6, 2718, 10.1021/nl061671j · DOI
  38. Wang X., 2009, Science, 324, 768, 10.1126/science.1170335 · DOI
  39. Schäffel F., 2011, ACS Nano, 5, 1975, 10.1021/nn103035y · DOI
  40. Rogers J. A., 2010, Nat. Nano, 5, 698, 10.1038/nnano.2010.200 · DOI
  41. Huang J. Y., 2009, Proc. Natl. Acad. Sci. U. S. A., 106, 10103, 10.1073/pnas.0905193106 · DOI · Paper page

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Metadata

Authors
Wang, H., Wang, Q., Cheng, Y., Li, K., Yao, Y., Zhang, Q., Dong, C., Wang, P., Schwingenschlögl, U., Yang, W., & Zhang, X. X.
Venue
Nano Letters
Publisher
American Chemical Society (ACS)
Published
2011-12-07
Volume
12
Issue
1
Pages
141-144
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
DOI
10.1021/nl2031629
OpenAlex
W2312413687
Cited by
590
References
0
FWCI
14.10
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Doping Monolayer Graphene with Single Atom Substitutions. https://app.cochat.ai/papers/10.1021/nl2031629
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Wang, H., Wang, Q., Cheng, Y., Li, K., Yao, Y., Zhang, Q., Dong, C., Wang, P., Schwingenschlögl, U., Yang, W., & Zhang, X. X. (2012). Doping Monolayer Graphene with Single Atom Substitutions. Nano Letters. https://doi.org/10.1021/nl2031629

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