The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Highly Stretchable Carbon Nanotube Transistors with Ion Gel Gate Dielectrics
Abstract
Field-effect transistors (FETs) that are stretchable up to 50% without appreciable degradation in performance are demonstrated. The FETs are based on buckled thin films of polyfluorene-wrapped semiconducting single-walled carbon nanotubes (CNTs) as the channel, a flexible ion gel as the dielectric, and buckled metal films as electrodes. The buckling of the CNT film enables the high degree of stretchability while the flexible nature of the ion gel allows it to maintain a high quality interface with the CNTs during stretching. An excellent on/off ratio of >10(4), a field-effect mobility of 10 cm(2) · V(-1) · s(-1), and a low operating voltage of <2 V are achieved over repeated mechanical cycling, with further strain accommodation possible. Deformable FETs are expected to facilitate new technologies like stretchable displays, conformal devices, and electronic skins.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Kim, D.-H., Lu, N., Ma, R., Kim, Y.-S., Kim, R.-H., Wang, S., Wu, J., Won, S. M., Tao, H., Islam, A., et al. (2011) · Science · doi:10.1126/science.1206157 · Cited by 4,836
An ultra-lightweight design for imperceptible plastic electronics
Kaltenbrunner, M., Sekitani, T., Reeder, J., Yokota, T., Kuribara, K., Tokuhara, T., Drack, M., Schwödiauer, R., Graz, I., Bauer-Gogonea, S., et al. (2013) · Nature · doi:10.1038/nature12314 · Cited by 2,485
A Physically Transient Form of Silicon Electronics
Hwang, S.-W., Tao, H., Kim, D.-H., Cheng, H., Song, J.-K., Rill, E., Brenckle, M. A., Panilaitis, B., Won, S. M., Kim, Y.-S., et al. (2012) · Science · doi:10.1126/science.1226325 · Cited by 1,286
Cited by
Yang, J. C., Mun, J., Kwon, S. Y., Park, S., Bao, Z., & Park, S. (2019) · Advanced Materials · doi:10.1002/adma.201904765 · Cited by 1,641
High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics
Wang, B., Huang, W., Chi, L., Al-Hashimi, M., Marks, T. J., & Facchetti, A. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.8b00045 · Cited by 818
Nanomaterial‐Enabled Stretchable Conductors: Strategies, Materials and Devices
Yao, S., & Zhu, Y. (2015) · Advanced Materials · doi:10.1002/adma.201404446 · Cited by 695
Multifunctional materials for implantable and wearable photonic healthcare devices
Lee, G.-H., Moon, H., Kim, H., Lee, G. H., Kwon, W., Yoo, S., Myung, D., Yun, S. H., Bao, Z., & Hahn, S. K. (2020) · Nature Reviews Materials · doi:10.1038/s41578-019-0167-3 · Cited by 667
Recent Progress on Stretchable Electronic Devices with Intrinsically Stretchable Components
Trung, T. Q., & Lee, N. (2017) · Advanced Materials · doi:10.1002/adma.201603167 · Cited by 497
Metadata
- Authors
- Xu, F., Wu, M.-Y., Safron, N. S., Roy, S. S., Jacobberger, R. M., Bindl, D. J., Seo, J.-H., Chang, T.-H., Ma, Z., & Arnold, M. S.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-01-06
- Volume
- 14
- Issue
- 2
- Pages
- 682-686
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2320012147
- Cited by
- 168
- References
- 3
- FWCI
- 10.27
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Highly Stretchable Carbon Nanotube Transistors with Ion Gel Gate Dielectrics. https://app.cochat.ai/papers/10.1021/nl403941a
- The paper
- Xu, F., Wu, M.-Y., Safron, N. S., Roy, S. S., Jacobberger, R. M., Bindl, D. J., Seo, J.-H., Chang, T.-H., Ma, Z., & Arnold, M. S. (2014). Highly Stretchable Carbon Nanotube Transistors with Ion Gel Gate Dielectrics. Nano Letters. https://doi.org/10.1021/nl403941a
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
