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Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
Open accessAbstract
Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 acts as a channel in an intimate contact with graphene electrodes in a field-effect transistor geometry. Our prototypical all-2D transistor is further integrated with a multilayer graphene charge trapping layer into a device that can be operated as a nonvolatile memory cell. Because of its band gap and 2D nature, monolayer MoS2 is highly sensitive to the presence of charges in the charge trapping layer, resulting in a factor of 10(4) difference between memory program and erase states. The two-dimensional nature of both the contact and the channel can be harnessed for the fabrication of flexible nanoelectronic devices with large-scale integration.
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Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
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Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Raman spectroscopy of graphene-based materials and its applications in related devices
Wu, J.-B., Lin, M.-L., Cong, X., Liu, H.-N., & Tan, P.-H. (2018) · Chemical Society Reviews · doi:10.1039/c6cs00915h · Cited by 2,092
Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
Roy, K., Padmanabhan, M., Goswami, S., Sai, T. P., Ramalingam, G., Raghavan, S., & Ghosh, A. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.206 · Cited by 1,436
Recent Advances in Flexible and Stretchable Bio‐Electronic Devices Integrated with Nanomaterials
Choi, S., Lee, H., Ghaffari, R., Hyeon, T., & Kim, D. (2016) · Advanced Materials · doi:10.1002/adma.201504150 · Cited by 1,104
Rise of silicene: A competitive 2D material
Zhao, J., Liu, H., Yu, Z., Quhe, R., Zhou, S., Wang, Y., Liu, C. C., Zhong, H., Han, N., Lu, J., et al. (2016) · Progress in Materials Science · doi:10.1016/j.pmatsci.2016.04.001 · Cited by 891
Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics
Wang, X., Wang, P., Wang, J., Hu, W., Zhou, X., Guo, N., Huang, H., Sun, S., Shen, H., Lin, T., et al. (2015) · Advanced Materials · doi:10.1002/adma.201503340 · Cited by 853
Shi, Y., Li, H., & Li, L.-J. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00256c · Cited by 845
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Huang, X., Tan, C., Yin, Z., & Zhang, H. (2014) · Advanced Materials · doi:10.1002/adma.201304964 · Cited by 632
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Ge, R., Wu, X., Kim, M., Shi, J., Sonde, S., Tao, L., Zhang, Y., Lee, J. C., & Akinwande, D. (2018) · Nano Letters · doi:10.1021/acs.nanolett.7b04342 · Cited by 586
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Huh, W., Lee, D., & Lee, C. (2020) · Advanced Materials · doi:10.1002/adma.202002092 · Cited by 586
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Shi, E., Gao, Y., Finkenauer, B. P., Akriti, A., Coffey, A. H., & Dou, L. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00886d · Cited by 445
Liu, C., Yan, X., Song, X., Ding, S., Zhang, D. W., & Zhou, P. (2018) · Nature Nanotechnology · doi:10.1038/s41565-018-0102-6 · Cited by 417
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Harris, K. D., Elias, A. L., & Chung, H.-J. (2016) · Journal of Materials Science · doi:10.1007/s10853-015-9643-3 · Cited by 403
Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio
Vu, Q. A., Shin, Y. S., Kim, Y. R., Nguyen, V. L., Kang, W. T., Kim, H., Luong, D. H., Lee, I. M., Lee, K., Ko, D.-S., et al. (2016) · Nature Communications · doi:10.1038/ncomms12725 · Cited by 371
2D Metallic Transition‐Metal Dichalcogenides: Structures, Synthesis, Properties, and Applications
Zhao, B., Shen, D., Zhang, Z., Lu, P., Hossain, M., Li, J., Li, B., & Duan, X. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202105132 · Cited by 359
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Metadata
- Authors
- Bertolazzi, S., Krasnozhon, D., & Kis, A.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2013-03-19
- Volume
- 7
- Issue
- 4
- Pages
- 3246-3252
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2135933491
- Cited by
- 1,035
- References
- 2
- FWCI
- 45.73
- Type
- journal article
- Language
- en
- Open access
- hybrid
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