The DOI matches its Crossref record; 41 of the 41 references it cites were found in a registry or an index.
Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition
Abstract
Tungsten diselenide (WSe2) is a two-dimensional material that is of interest for next-generation electronic and optoelectronic devices due to its direct bandgap of 1.65 eV in the monolayer form and excellent transport properties. However, technologies based on this 2D material cannot be realized without a scalable synthesis process. Here, we demonstrate the first scalable synthesis of large-area, mono and few-layer WSe2 via metal-organic chemical vapor deposition using tungsten hexacarbonyl (W(CO)6) and dimethylselenium ((CH3)2Se). In addition to being intrinsically scalable, this technique allows for the precise control of the vapor-phase chemistry, which is unobtainable using more traditional oxide vaporization routes. We show that temperature, pressure, Se:W ratio, and substrate choice have a strong impact on the ensuing atomic layer structure, with optimized conditions yielding >8 μm size domains. Raman spectroscopy, atomic force microscopy (AFM), and cross-sectional transmission electron microscopy (TEM) confirm crystalline monoto-multilayer WSe2 is achievable. Finally, TEM and vertical current/voltage transport provide evidence that a pristine van der Waals gap exists in WSe2/graphene heterostructures.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides
Xiao, D., Liu, G.-B., Feng, W., Xu, X., & Yao, W. (2012) · Physical Review Letters · doi:10.1103/physrevlett.108.196802 · Cited by 5,152
Atomically thin p–n junctions with van der Waals heterointerfaces
Lee, C.-H., Lee, G.-H., van der Zande, A. M., Chen, W., Li, Y., Han, M., Cui, X., Arefe, G., Nuckolls, C., Heinz, T. F., et al. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.150 · Cited by 2,303
Synthesis of MoS 2 and MoSe 2 Films with Vertically Aligned Layers
Kong, D., Wang, H., Cha, J. J., Pasta, M., Koski, K. J., Yao, J., & Cui, Y. (2013) · Nano Letters · doi:10.1021/nl400258t · Cited by 2,250
Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2
Zhao, W., Ghorannevis, Z., Chu, L., Toh, M., Kloc, C., Tan, P.-H., & Eda, G. (2013) · ACS Nano · doi:10.1021/nn305275h · Cited by 2,122
High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
Fang, H., Chuang, S., Chang, T. C., Takei, K., Takahashi, T., & Javey, A. (2012) · Nano Letters · doi:10.1021/nl301702r · Cited by 1,862
Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
Baugher, B. W. H., Churchill, H. O. H., Yang, Y., & Jarillo-Herrero, P. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.25 · Cited by 1,523
Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2
Tonndorf, P., Schmidt, R., Böttger, P., Zhang, X., Börner, J., Liebig, A., Albrecht, M., Kloc, C., Gordan, O., Zahn, D. R. T., et al. (2013) · Optics Express · doi:10.1364/oe.21.004908 · Cited by 1,521
Local Strain Engineering in Atomically Thin MoS2
Castellanos-Gomez, A., Roldán, R., Cappelluti, E., Buscema, M., Guinea, F., van der Zant, H. S. J., & Steele, G. A. (2013) · Nano Letters · doi:10.1021/nl402875m · Cited by 1,309
Zeng, H., Liu, G.-B., Dai, J., Yan, Y., Zhu, B., He, R., Xie, L., Xu, S., Chen, X., Yao, W., et al. (2013) · Scientific Reports · doi:10.1038/srep01608 · Cited by 1,064
Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications
Huang, J.-K., Pu, J., Hsu, C.-L., Chiu, M.-H., Juang, Z.-Y., Chang, Y.-H., Chang, W.-H., Iwasa, Y., Takenobu, T., & Li, L.-J. (2014) · ACS Nano · doi:10.1021/nn405719x · Cited by 1,060
Cited by
Recent development of two-dimensional transition metal dichalcogenides and their applications
Choi, W., Choudhary, N., Han, G. H., Park, J., Akinwande, D., & Lee, Y. H. (2017) · Materials Today · doi:10.1016/j.mattod.2016.10.002 · Cited by 2,769
Recent Advances in Two-Dimensional Materials beyond Graphene
Bhimanapati, G. R., Lin, Z., Meunier, V., Jung, Y., Cha, J., Das, S., Xiao, D., Son, Y., Strano, M. S., Cooper, V. R., et al. (2015) · ACS Nano · doi:10.1021/acsnano.5b05556 · Cited by 2,659
Self-citationProgress, Challenges, and Opportunities for 2D Material Based Photodetectors
Long, M., Wang, P., Fang, H., & Hu, W. (2019) · Advanced Functional Materials · doi:10.1002/adfm.201803807 · Cited by 1,598
Cai, Z., Liu, B., Zou, X., & Cheng, H.-M. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00536 · Cited by 1,495
Bandgap engineering of two-dimensional semiconductor materials
Chaves, A., Azadani, J. G., Alsalman, H., da Costa, D. R., Frisenda, R., Chaves, A. J., Song, S. H., Kim, Y. D., He, D., Zhou, J., et al. (2020) · npj 2D Materials and Applications · doi:10.1038/s41699-020-00162-4 · Cited by 1,296
Recent Progress and Future Prospects of 2D‐Based Photodetectors
Huo, N., & Konstantatos, G. (2018) · Advanced Materials · doi:10.1002/adma.201801164 · Cited by 730
Interface-Assisted Synthesis of 2D Materials: Trend and Challenges
Dong, R., Zhang, T., & Feng, X. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.8b00056 · Cited by 710
Recommended Methods to Study Resistive Switching Devices
Lanza, M., Wong, H. ‐. P., Pop, E., Ielmini, D., Strukov, D., Regan, B. C., Larcher, L., Villena, M. A., Yang, J. J., Goux, L., et al. (2019) · Advanced Electronic Materials · doi:10.1002/aelm.201800143 · Cited by 674
Halide-assisted atmospheric pressure growth of large WSe2 and WS2 monolayer crystals
Li, S., Wang, S., Tang, D.-M., Zhao, W., Xu, H., Chu, L., Bando, Y., Golberg, D., & Eda, G. (2015) · Applied Materials Today · doi:10.1016/j.apmt.2015.09.001 · Cited by 465
Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures
Lin, Y.-C., Ghosh, R. K., Addou, R., Lu, N., Eichfeld, S. M., Zhu, H., Li, M.-Y., Peng, X., Kim, M. J., Li, L.-J., et al. (2015) · Nature Communications · doi:10.1038/ncomms8311 · Cited by 461
Self-citationSamadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Manganese Doping of Monolayer MoS2: The Substrate Is Critical
Zhang, K., Feng, S., Wang, J., Azcatl, A., Lu, N., Addou, R., Wang, N., Zhou, C., Lerach, J., Bojan, V., et al. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b02315 · Cited by 406
Self-citationLi, H., Li, Y., Aljarb, A., Shi, Y., & Li, L.-J. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00212 · Cited by 382
Transparent Electronics for Wearable Electronics Application
Won, D., Bang, J., Choi, S. H., Pyun, K. R., Jeong, S., Lee, Y., & Ko, S. H. (2023) · Chemical Reviews · doi:10.1021/acs.chemrev.3c00139 · Cited by 339
Emerging energy applications of two-dimensional layered transition metal dichalcogenides
Li, H., Shi, Y., Chiu, M.-H., & Li, L.-J. (2015) · Nano Energy · doi:10.1016/j.nanoen.2015.10.023 · Cited by 290
Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire
Zhang, X., Choudhury, T. H., Chubarov, M., Xiang, Y., Jariwala, B., Zhang, F., Alem, N., Wang, G.-C., Robinson, J. A., & Redwing, J. M. (2018) · Nano Letters · doi:10.1021/acs.nanolett.7b04521 · Cited by 266
Self-citationXi, C., Xu, W., Zhou, S., Wang, Y., Han, S., & Jiang, J. (2024) · International Journal of Hydrogen Energy · doi:10.1016/j.ijhydene.2024.01.296 · Cited by 11
Metadata
- Authors
- Eichfeld, S. M., Hossain, L., Lin, Y.-C., Piasecki, A. F., Kupp, B., Birdwell, A. G., Burke, R. A., Lu, N., Peng, X., Li, J., Azcatl, A., McDonnell, S., Wallace, R. M., Kim, M. J., Mayer, T. S., Redwing, J. M., & Robinson, J. A.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2015-02-02
- Volume
- 9
- Issue
- 2
- Pages
- 2080-2087
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2031885404
- Cited by
- 416
- References
- 41
- FWCI
- 16.65
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
