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Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals
Open accessAbstract
A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (∼1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes.
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Metadata
- Authors
- Carey, B. J., Ou, J. Z., Clark, R. M., Berean, K. J., Zavabeti, A., Chesman, A. S. R., Russo, S. P., Lau, D. W. M., Xu, Z.-Q., Bao, Q., Kavehei, O., Gibson, B. C., Dickey, M. D., Kaner, R. B., Daeneke, T., & Kalantar-Zadeh, K.
- Venue
- Nature Communications
- Published
- 2017-02-17
- Volume
- 8
- Issue
- 1
- Pages
- 14482-14482
- ISSN
- 2041-1723 (ISSN-L)
- OpenAlex
- W2587889034
- Cited by
- 292
- References
- 32
- FWCI
- 15.02
- Type
- journal article
- Language
- en
- Open access
- gold
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