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Cited by 470

The DOI matches its Crossref record; 19 of the 19 references it cites were found in a registry or an index.

High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

Open access
Hu, Jia-Mian, Li, Zheng, Chen, Long-Qing, Nan, Ce-Wen·2011·Nature Communications

Abstract

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch−2, ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns. Magnetoresistive random access memory offers significant promise as a next-generation memory technology. Nan and colleagues present a design concept for a device that simultaneously possesses ultrahigh storage capacity, ultralow power dissipation, and high-speed operation at room temperature.

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Metadata

Authors
Hu, J.-M., Li, Z., Chen, L.-Q., & Nan, C.-W.
Venue
Nature Communications
Published
2011-11-22
Volume
2
Issue
1
Pages
553-553
ISSN
2041-1723 (ISSN-L)
OpenAlex
W2116507986
Cited by
470
References
19
FWCI
13.21
Type
journal article
Language
en
Open access
hybrid

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CoChat. (2026). Citation check: High-density magnetoresistive random access memory operating at ultralow voltage at room temperature. https://app.cochat.ai/papers/10.1038/ncomms1564
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Hu, J.-M., Li, Z., Chen, L.-Q., & Nan, C.-W. (2011). High-density magnetoresistive random access memory operating at ultralow voltage at room temperature. Nature Communications. https://doi.org/10.1038/ncomms1564

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