A strong electro-optically active lead-free ferroelectric integrated on silicon
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The development of silicon photonics could greatly benefit from the linear electro-optical properties, absent in bulk silicon, of ferroelectric oxides, as a novel way to seamlessly connect the electrical and optical domain. Of all oxides, barium titanate exhibits one of the largest linear electro-optical coefficients, which has however not yet been explored for thin films on silicon. Here we report on the electro-optical properties of thin barium titanate films epitaxially grown on silicon substrates. We extract a large effective Pockels coefficient of r(eff) = 148 pm V(-1), which is five times larger than in the current standard material for electro-optical devices, lithium niobate. We also reveal the tensor nature of the electro-optical properties, as necessary for properly designing future devices, and furthermore unambiguously demonstrate the presence of ferroelectricity. The integration of electro-optical active films on silicon could pave the way towards power-efficient, ultra-compact integrated devices, such as modulators, tuning elements and bistable switches.
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In BaTiO3 thin films integrated on Si, the strongest electro-optic coupling occurs when the electric field is applied 45° relative to the BaTiO3 crystalline axes.
“In BTO thin films integrated on Si, the strongest EO coupling occurs when the electric field is applied 45° relative to the BTO crystalline axes 18,23 .”
From Enhancement of Electro-Optic Response in BaTiO3 Films Integrated on Si via Heating and Cooling Rate Control (2025) · cites this paper as [23]
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Self-citation$\chi ^{(2)}$ Modulator With 40-GHz Modulation Utilizing BaTiO3 Photonic Crystal Waveguides
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Self-citationLaAlO 3 /SrTiO 3 Heterointerface: 20 Years and Beyond
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Self-citationNanoimprinting Solution-Derived Barium Titanate for Electro-Optic Metasurfaces
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- Authors
- Abel, S., Stöferle, T., Marchiori, C., Rossel, C., Rossell, M. D., Erni, R., Caimi, D., Sousa, M., Chelnokov, A., Offrein, B. J., & Fompeyrine, J.
- Affiliations
- IBM Research - Zurich (CH)
- Empa (CH)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- Corresponding author
- Abel, Stefan
- ORCID
- Venue
- Nature Communications
- Published
- 2013-04-09
- Volume
- 4
- Issue
- 1
- Pages
- 1671-1671
- ISSN
- 2041-1723 (ISSN-L)
- OpenAlex
- W2037530588
- Cited by
- 350
- References
- 33
- Citations by year
- 2026: 25 · 2025: 36 · 2024: 35 · 2023: 18 · 2022: 22 · 2021: 29 · 2020: 23 · 2019: 40 · 2018: 36 · 2017: 20 · 2016: 22 · 2015: 25 · 2014: 17 · 2013: 2
- FWCI
- 9.92
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Licence
- Locations
- Nature Communications (publishedVersion)
- PubMed (publishedVersion)
- RePEc: Research Papers in Economics (submittedVersion)
- DORA Empa (Swiss Federal Laboratories for Materials Science and Technology (Empa)) (submittedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Photorefractive and Nonlinear Optics
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
- Keywords
- barium titanate, lead-free ferroelectrics, electro-optic effect, Pockels coefficient, ferroelectric thin films, epitaxial growth on silicon, silicon photonics, electro-optic modulator, ferroelectricity, optical switches
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