c -axis oriented epitaxial BaTiO3 films on (001) Si
Abstract
c -axis oriented epitaxial films of the ferroelectric BaTiO3 have been grown on (001) Si by reactive molecular-beam epitaxy. The orientation relationship between the film and substrate is (001) BaTiO3‖(001) Si and [100] BaTiO3‖[110] Si. The uniqueness of this integration is that the entire epitaxial BaTiO3 film on (001) Si is c-axis oriented, unlike any reported so far in the literature. The thermal expansion incompatibility between BaTiO3 and silicon is overcome by introducing a relaxed buffer layer of BaxSr1−xTiO3 between the BaTiO3 film and silicon substrate. The rocking curve widths of the BaTiO3 films are as narrow as 0.4°. X-ray diffraction and second harmonic generation experiments reveal the out-of-plane c-axis orientation of the epitaxial BaTiO3 film. Piezoresponse atomic force microscopy is used to write ferroelectric domains with a spatial resolution of ∼100nm, corroborating the orientation of the ferroelectric film.
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The results shown by out-of-plane XRD are opposite to what has been expected in prior studies.
“The results shown by OOP XRD are opposite to what has been expected in prior studies 20,27 .”
From Enhancement of Electro-Optic Response in BaTiO3 Films Integrated on Si via Heating and Cooling Rate Control (2025) · cites this paper as [27]
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- Authors
- Vaithyanathan, V., Lettieri, J., Tian, W., Sharan, A., Vasudevarao, A., Li, Y. L., Kochhar, A., Ma, H., Levy, J., Zschack, P., Woicik, J. C., Chen, L. Q., Gopalan, V., & Schlom, D. G.
- Affiliations
- Pennsylvania State University (US)
- University of Pittsburgh (US)
- Argonne National Laboratory (US)
- National Institute of Standards and Technology (US)
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2006-07-15
- Volume
- 100
- Issue
- 2
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W1634782366
- Cited by
- 123
- References
- 50
- Citations by year
- 2026: 4 · 2025: 7 · 2024: 3 · 2023: 1 · 2022: 5 · 2021: 8 · 2020: 4 · 2019: 4 · 2018: 6 · 2017: 5 · 2016: 10 · 2015: 11 · 2014: 11 · 2013: 13 · 2012: 9
- FWCI
- 3.06
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Applied Physics (publishedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
- Keywords
- BaTiO3 thin films, c-axis orientation, epitaxial thin films, silicon substrate, orientation relationship, barium strontium titanate, thermal expansion mismatch, ferroelectric domains, second harmonic generation, rocking curve width
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