Cited by 123Ferroelectric and Piezoelectric MaterialsFerroelectric and Negative Capacitance DevicesMultiferroics and related materials

c -axis oriented epitaxial BaTiO3 films on (001) Si

Vaithyanathan, V., Lettieri, J., Tian, W., Sharan, A., Vasudevarao, A., Li, Y. L., Kochhar, A., Ma, H. +6 more·2006·Journal of Applied Physics

Abstract

c -axis oriented epitaxial films of the ferroelectric BaTiO3 have been grown on (001) Si by reactive molecular-beam epitaxy. The orientation relationship between the film and substrate is (001) BaTiO3‖(001) Si and [100] BaTiO3‖[110] Si. The uniqueness of this integration is that the entire epitaxial BaTiO3 film on (001) Si is c-axis oriented, unlike any reported so far in the literature. The thermal expansion incompatibility between BaTiO3 and silicon is overcome by introducing a relaxed buffer layer of BaxSr1−xTiO3 between the BaTiO3 film and silicon substrate. The rocking curve widths of the BaTiO3 films are as narrow as 0.4°. X-ray diffraction and second harmonic generation experiments reveal the out-of-plane c-axis orientation of the epitaxial BaTiO3 film. Piezoresponse atomic force microscopy is used to write ferroelectric domains with a spatial resolution of ∼100nm, corroborating the orientation of the ferroelectric film.

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Crossref · 10.1063/1.2203208

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Authors
Vaithyanathan, V., Lettieri, J., Tian, W., Sharan, A., Vasudevarao, A., Li, Y. L., Kochhar, A., Ma, H., Levy, J., Zschack, P., Woicik, J. C., Chen, L. Q., Gopalan, V., & Schlom, D. G.
Affiliations
  • Pennsylvania State University (US)
  • University of Pittsburgh (US)
  • Argonne National Laboratory (US)
  • National Institute of Standards and Technology (US)
Venue
Journal of Applied Physics
Published
2006-07-15
Volume
100
Issue
2
ISSN
  • 0021-8979 (ISSN-L)
  • 1089-7550
OpenAlex
W1634782366
Cited by
123
References
50
Citations by year
2026: 4 · 2025: 7 · 2024: 3 · 2023: 1 · 2022: 5 · 2021: 8 · 2020: 4 · 2019: 4 · 2018: 6 · 2017: 5 · 2016: 10 · 2015: 11 · 2014: 11 · 2013: 13 · 2012: 9
FWCI
3.06
Type
journal article
Language
en
Open access
closed
Locations
Journal of Applied Physics (publishedVersion)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
Keywords
BaTiO3 thin films, c-axis orientation, epitaxial thin films, silicon substrate, orientation relationship, barium strontium titanate, thermal expansion mismatch, ferroelectric domains, second harmonic generation, rocking curve width

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