The DOI matches its Crossref record; 31 of the 31 references it cites were found in a registry or an index.
An ultralow power athermal silicon modulator
Open accessAbstract
Silicon photonics has emerged as the leading candidate for implementing ultralow power wavelength–division–multiplexed communication networks in high-performance computers, yet current components (lasers, modulators, filters and detectors) consume too much power for the high-speed femtojoule-class links that ultimately will be required. Here we demonstrate and characterize the first modulator to achieve simultaneous high-speed (25 Gb s−1), low-voltage (0.5 VPP) and efficient 0.9 fJ per bit error-free operation. This low-energy high-speed operation is enabled by a record electro-optic response, obtained in a vertical p–n junction device that at 250 pm V−1 (30 GHz V−1) is up to 10 times larger than prior demonstrations. In addition, this record electro-optic response is used to compensate for thermal drift over a 7.5 °C temperature range with little additional energy consumption (0.24 fJ per bit for a total energy consumption below 1.03 J per bit). The combined results of highly efficient modulation and electro-optic thermal compensation represent a new paradigm in modulator development and a major step towards single-digit femtojoule-class communications. Optical modulators on silicon promise to deliver ultralow power communication networks between or within computer chips. Here, the authors demonstrate a silicon modulator operating with less than one femtojoule energy and are able to compensate for thermal drift over a 7.5 °C temperature range.
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Metadata
- Authors
- Timurdogan, E., Sorace-Agaskar, C. M., Sun, J., Shah Hosseini, E., Biberman, A., & Watts, M. R.
- Venue
- Nature Communications
- Published
- 2014-06-11
- Volume
- 5
- Issue
- 1
- Pages
- 4008-4008
- ISSN
- 2041-1723 (ISSN-L)
- OpenAlex
- W2111721632
- Cited by
- 444
- References
- 31
- FWCI
- 22.64
- Type
- journal article
- Language
- en
- Open access
- hybrid
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