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In situ imaging of the conducting filament in a silicon oxide resistive switch
Open accessAbstract
The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive switch. The electroforming process is revealed to involve the local enrichment of silicon from the silicon oxide matrix. Semi-metallic silicon nanocrystals with structural variations from the conventional diamond cubic form of silicon are observed, which likely accounts for the conduction in the filament. The growth and shrinkage of the silicon nanocrystals in response to different electrical stimuli show energetically viable transition processes in the silicon forms, offering evidence for the switching mechanism. The study here also provides insights into the electrical breakdown process in silicon oxide layers, which are ubiquitous in a host of electronic devices.
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Cites
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Lee, M.-J., Lee, C. B., Lee, D., Lee, S. R., Chang, M., Hur, J. H., Kim, Y.-B., Kim, C.-J., Seo, D. H., Seo, S., et al. (2011) · Nature Materials · doi:10.1038/nmat3070 · Cited by 2,228
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.456 · Cited by 2,092
Yang, Y. C., Pan, F., Liu, Q., Liu, M., & Zeng, F. (2009) · Nano Letters · doi:10.1021/nl900006g · Cited by 876
Electrical phenomena in amorphous oxide films
Dearnaley, G., Stoneham, A. M., & Morgan, D. V. (1970) · Reports on Progress in Physics · doi:10.1088/0034-4885/33/3/306 · Cited by 731
Cited by
Memristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885
Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
Yang, Y., Gao, P., Li, L., Pan, X., Tappertzhofen, S., Choi, S., Waser, R., Valov, I., & Lu, W. D. (2014) · Nature Communications · doi:10.1038/ncomms5232 · Cited by 667
Status and prospects of ZnO-based resistive switching memory devices
Simanjuntak, F. M., Panda, D., Wei, K.-H., & Tseng, T.-Y. (2016) · Nanoscale Research Letters · doi:10.1186/s11671-016-1570-y · Cited by 244
Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors
Li, C., Han, L., Jiang, H., Jang, M.-H., Lin, P., Wu, Q., Barnell, M., Yang, J. J., Xin, H. L., & Xia, Q. (2017) · Nature Communications · doi:10.1038/ncomms15666 · Cited by 229
Metadata
- Authors
- Yao, J., Zhong, L., Natelson, D., & Tour, J. M.
- Venue
- Scientific Reports
- Published
- 2012-01-31
- Volume
- 2
- Issue
- 1
- Pages
- 242-242
- ISSN
- 2045-2322 (ISSN-L)
- OpenAlex
- W2038459401
- Cited by
- 169
- References
- 5
- FWCI
- 10.38
- Type
- journal article
- Language
- en
- Open access
- gold
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