The DOI matches its Crossref record; 30 of the 30 references it cites were found in a registry or an index.
Toward air-stable multilayer phosphorene thin-films and transistors
Open accessAbstract
Few-layer black phosphorus (BP), also known as phosphorene, is poised to be the most attractive graphene analogue owing to its high mobility approaching that of graphene and its thickness-tunable band gap that can be as large as that of molybdenum disulfide. In essence, phosphorene represents the much sought after high-mobility, large direct band gap two-dimensional layered crystal that is ideal for optoelectronics and flexible devices. However, its instability in air is of paramount concern for practical applications. Here, we demonstrate air-stable BP devices with dielectric and hydrophobic encapsulation. Microscopy, spectroscopy and transport techniques were employed to elucidate the aging mechanism, which can initiate from the BP surface for bare samples, or edges for samples with thin dielectric coating, highlighting the ineffectiveness of conventional scaled dielectrics. Our months-long studies indicate that a double layer capping of Al 2 O 3 and hydrophobic fluoropolymer affords BP devices and transistors with indefinite air-stability for the first time, overcoming a critical material challenge for applied research and development.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Raman Spectrum of Graphene and Graphene Layers
Ferrari, A. C., Meyer, J. C., Scardaci, V., Casiraghi, C., Lazzeri, M., Mauri, F., Piscanec, S., Jiang, D., Novoselov, K. S., Roth, S., et al. (2006) · Physical Review Letters · doi:10.1103/physrevlett.97.187401 · Cited by 15,047
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
Black phosphorus field-effect transistors
Li, L., Yu, Y., Ye, G. J., Ge, Q., Ou, X., Wu, H., Feng, D., Chen, X. H., & Zhang, Y. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.35 · Cited by 8,413
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
Liu, H., Neal, A. T., Zhu, Z., Luo, Z., Xu, X., Tománek, D., & Ye, P. D. (2014) · ACS Nano · doi:10.1021/nn501226z · Cited by 6,480
Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus
Tran, V., Soklaski, R., Liang, Y., & Yang, L. (2014) · Physical Review B · doi:10.1103/physrevb.89.235319 · Cited by 2,337
Two-dimensional flexible nanoelectronics
Akinwande, D., Petrone, N., & Hone, J. (2014) · Nature Communications · doi:10.1038/ncomms6678 · Cited by 1,910
Self-citationFast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors
Buscema, M., Groenendijk, D. J., Blanter, S. I., Steele, G. A., van der Zant, H. S. J., & Castellanos-Gomez, A. (2014) · Nano Letters · doi:10.1021/nl5008085 · Cited by 1,656
Isolation and characterization of few-layer black phosphorus
Castellanos-Gomez, A., Vicarelli, L., Prada, E., Island, J. O., Narasimha-Acharya, K. L., Blanter, S. I., Groenendijk, D. J., Buscema, M., Steele, G. A., Alvarez, J. V., et al. (2014) · 2D Materials · doi:10.1088/2053-1583/1/2/025001 · Cited by 1,621
Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation
Wood, J. D., Wells, S. A., Jariwala, D., Chen, K.-S., Cho, E., Sangwan, V. K., Liu, X., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · Nano Letters · doi:10.1021/nl5032293 · Cited by 1,491
Semiconducting black phosphorus: synthesis, transport properties and electronic applications
Liu, H., Du, Y., Deng, Y., & Ye, P. D. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00257a · Cited by 1,473
Electric field effect in ultrathin black phosphorus
Koenig, S. P., Doganov, R. A., Schmidt, H., Castro Neto, A. H., & Özyilmaz, B. (2014) · Applied Physics Letters · doi:10.1063/1.4868132 · Cited by 1,223
Isolation and characterization of few-layer black phosphorus
Castellanos-Gómez, A., Vicarelli, L., Prada, E., Island, J. O., Narasimha-Acharya, K. L., Blanter, S. I., Groenendijk, D. J., Buscema, M., Steele, G. A., Alvarez, J. V., et al. (2014) · LA Referencia (Red Federada de Repositorios Institucionales de Publicaciones Científicas) · Cited by 1,171
Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
Kim, S., Nah, J., Jo, I., Shahrjerdi, D., Colombo, L., Yao, Z., Tutuc, E., & Banerjee, S. K. (2009) · Applied Physics Letters · doi:10.1063/1.3077021 · Cited by 1,012
Self-citationEnvironmental instability of few-layer black phosphorus
Island, J. O., Steele, G. A., Zant, H. S. J. V. D., & Castellanos-Gomez, A. (2015) · 2D Materials · doi:10.1088/2053-1583/2/1/011002 · Cited by 954
TWO NEW MODIFICATIONS OF PHOSPHORUS.
Bridgman, P. W. (1914) · Journal of the American Chemical Society · doi:10.1021/ja02184a002 · Cited by 811
Black Phosphorus Photodetector for Multispectral, High-Resolution Imaging
Engel, M., Steiner, M., & Avouris, P. (2014) · Nano Letters · doi:10.1021/nl502928y · Cited by 605
Ziletti, A., Carvalho, A., Campbell, D. K., Coker, D. F., & Castro Neto, A. H. (2015) · Physical Review Letters · doi:10.1103/physrevlett.114.046801 · Cited by 602
Semiconducting black phosphorus
Morita, A. (1986) · Applied Physics A Solids and Surfaces · doi:10.1007/bf00617267 · Cited by 596
Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics
Javey, A., Guo, J., Farmer, D. B., Wang, Q., Wang, D., Gordon, R. G., Lundstrom, M., & Dai, H. (2004) · Nano Letters · doi:10.1021/nl035185x · Cited by 537
Graphene Transistors: Status, Prospects, and Problems
Schwierz, F. (2013) · Proceedings of the IEEE · doi:10.1109/jproc.2013.2257633 · Cited by 517
Chang, H.-Y., Yang, S., Lee, J., Tao, L., Hwang, W.-S., Jena, D., Lu, N., & Akinwande, D. (2013) · ACS Nano · doi:10.1021/nn401429w · Cited by 487
Self-citationAmbipolar Phosphorene Field Effect Transistor
Das, S., Demarteau, M., & Roelofs, A. (2014) · ACS Nano · doi:10.1021/nn505868h · Cited by 398
Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation
Na, J., Lee, Y. T., Lim, J. A., Hwang, D. K., Kim, G.-T., Choi, W. K., & Song, Y.-W. (2014) · ACS Nano · doi:10.1021/nn5052376 · Cited by 290
Review of the doping of carbon nanotubes (multiwalled and single-walled)
Duclaux, L. (2002) · Carbon · doi:10.1016/s0008-6223(02)00043-x · Cited by 288
High-Frequency Graphene Voltage Amplifier
Han, S., Jenkins, K. A., Garcia, A. V., et al. (2011) · Nano Letters · doi:10.1021/nl2016637 · Cited by 183
Liu, H., Neal, A. T., Si, M., Du, Y., & Ye, P. D. (2014) · IEEE Electron Device Letters · doi:10.1109/led.2014.2323951 · Cited by 178
Lee, J., Ha, T., Li, H., Parrish, K. N., Holt, M., Dodabalapur, A., Ruoff, R. S., & Akinwande, D. (2013) · ACS Nano · doi:10.1021/nn403487y · Cited by 144
Self-citationMesoscale Imperfections in MoS2 Atomic Layers Grown by a Vapor Transport Technique
Liu, Y., Ghosh, R., Wu, D., et al. (2014) · Nano Letters · doi:10.1021/nl501782e · Cited by 75
Self-citationThree-Gigahertz Graphene Frequency Doubler on Quartz Operating Beyond the Transit Frequency
Ramon, M., Parrish, K. N., Chowdhury, S. F., Magnuson, C. W., Movva, H. C. P., Ruoff, R. S., Banerjee, S. K., & Akinwande, D. (2012) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2012.2203826 · Cited by 68
Self-citation
Cited by
Phosphorene: from theory to applications
Carvalho, A., Wang, M., Zhu, X., Rodin, A. S., Su, H., & Castro Neto, A. H. (2016) · Nature Reviews Materials · doi:10.1038/natrevmats.2016.61 · Cited by 1,159
Recent progress in 2D group-VA semiconductors: from theory to experiment
Zhang, S., Guo, S., Chen, Z., Wang, Y., Gao, H., Gómez-Herrero, J., Ares, P., Zamora, F., Zhu, Z., & Zeng, H. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00125h · Cited by 850
Light‐Induced Ambient Degradation of Few‐Layer Black Phosphorus: Mechanism and Protection
Zhou, Q., Chen, Q., Tong, Y., & Wang, J. (2016) · Angewandte Chemie International Edition · doi:10.1002/anie.201605168 · Cited by 658
Doganov, R. A., O’Farrell, E. C. T., Koenig, S. P., Yeo, Y., Ziletti, A., Carvalho, A., Campbell, D. K., Coker, D. F., Watanabe, K., Taniguchi, T., et al. (2015) · Nature Communications · doi:10.1038/ncomms7647 · Cited by 521
Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices
Pang, J., Bachmatiuk, A., Yin, Y., Trzebicka, B., Zhao, L., Fu, L., Mendes, R. G., Gemming, T., Liu, Z., & Rummeli, M. H. (2018) · Advanced Energy Materials · doi:10.1002/aenm.201702093 · Cited by 518
Metadata
- Authors
- Kim, J.-S., Liu, Y., Zhu, W., Kim, S., Wu, D., Tao, L., Dodabalapur, A., Lai, K., & Akinwande, D.
- Venue
- Scientific Reports
- Published
- 2015-03-11
- Volume
- 5
- Issue
- 1
- Pages
- 8989-8989
- ISSN
- 2045-2322 (ISSN-L)
- OpenAlex
- W2051625133
- Cited by
- 408
- References
- 30
- FWCI
- 28.64
- Type
- journal article
- Language
- en
- Open access
- gold
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
