Photolithography reaches 6 nm half-pitch using extreme ultraviolet light
Open accessAbstract
Extreme ultraviolet interference lithography records the interference pattern of two diffracted, coherent light beams, where the pattern resolution is half the diffraction grating resolution. The fabrication of diffraction grating masks by e-beam lithography is restricted by the electron proximity effect and pattern transfer limitations into diffraction efficient materials. By patterning HSQ lines at a relaxed pitch to avoid the electron proximity effect, depositing conformal iridium via atomic layer deposition, followed by ion milling the top and bottom iridium and HSQ removal, we fabricated iridium diffraction gratings at double the line spacing of the original HSQ lines. Line/space patterns of 6-nm half-pitch patterns were achieved using these masks, marking a new record resolution in photolithography.
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
Sub-10 nm half-pitch resolutions were demonstrated with EUV interference lithography at the XIL-II beamline of the Swiss Light Source at The Paul Scherrer Institute.
“Sub-10 nm half-pitch resolutions were demonstrated with EUV interference lithography at the XIL -II beamline of the Swiss Light Source at The Paul Scherrer Institute 52,53 .”
From Extreme ultraviolet lithography (2024) · cites this paper as [53]
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Cites
Rigorous coupled-wave analysis of planar-grating diffraction
Moharam, M. G. J., & Gaylord, T. K. (1981) · Journal of the Optical Society of America · doi:10.1364/josa.71.000811 · Cited by 2,257 · see citing works
Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges
Profijt, H. B., Potts, S. E., van de Sanden, M. C. M., et al. (2011) · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · doi:10.1116/1.3609974 · Cited by 909 · see citing works
High-efficiency multilevel zone plates for keV X-rays
Fabrizio, E. M. D., Romanato, F., Gentili, M., et al. (1999) · Nature · doi:10.1038/44791 · Cited by 268 · see citing works
Lithography at EUV wavelengths
Tallents, G. J., Wagenaars, E., & Pert, G. J. (2010) · Nature Photonics · doi:10.1038/nphoton.2010.277 · Cited by 206 · see citing works
Sub-10 nm patterning using EUV interference lithography
Päivänranta, B., Langner, A., Kirk, E. C., Dávid, C., & Ekinci, Y. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/37/375302 · Cited by 173 · see citing works
Self-citationMojarad, N., Hojeij, M., Wang, L., Gobrecht, J., & Ekinci, Y. (2015) · Nanoscale · doi:10.1039/c4nr07420c · Cited by 102 · see citing works
Self-citationPrecursors as enablers of ALD technology: Contributions from University of Helsinki
Hatanpää, T., Ritala, M., & Leskelä, M. A. (2013) · Coordination Chemistry Reviews · doi:10.1016/j.ccr.2013.07.002 · Cited by 101 · see citing works
High-resolution and large-area nanoparticle arrays using EUV interference lithography
Karim, W., Tschupp, S. A., Oezaslan, M., et al. (2015) · Nanoscale · doi:10.1039/c5nr00565e · Cited by 66 · see citing works
EUV lithography scanner for sub-8nm resolution
van Schoot, J., Schenau, K. V. I., Valentin, C., et al. (2015) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2087502 · Cited by 61 · see citing works
Broadband interference lithography at extreme ultraviolet and soft x-ray wavelengths
Mojarad, N., Fan, D., Gobrecht, J., & Ekinci, Y. (2014) · Optics Letters · doi:10.1364/ol.39.002286 · Cited by 50 · see citing works
Self-citationBuitrago, E., Fallica, R., Fan, D., et al. (2016) · Microelectronic Engineering · doi:10.1016/j.mee.2016.02.023 · Cited by 40 · see citing works
Self-citationWang, L., Terhalle, B., Guzenko, V. A., et al. (2012) · Applied Physics Letters · doi:10.1063/1.4748758 · Cited by 33 · see citing works
Fabrication of quasiperiodic nanostructures with EUV interference lithography
Langner, A., Päivänranta, B., Terhalle, B., et al. (2012) · Nanotechnology · doi:10.1088/0957-4484/23/10/105303 · Cited by 32 · see citing works
Studying secondary electron behavior in EUV resists using experimentation and modeling
Narasimhan, A. K., Grzeskowiak, S., Srivats, B., Herbol, H., Wisehart, L., Kelly, C., Earley, W., Ocola, L. E., Neisser, M. O., Denbeaux, G., et al. (2015) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2086596 · Cited by 29 · see citing works
Nickel electroplating for high-resolution nanostructures
Hili, K., Fan, D., Guzenko, V. A., et al. (2015) · Microelectronic Engineering · doi:10.1016/j.mee.2015.02.031 · Cited by 27 · see citing works
Self-citationHuang, J., Fan, D., Ekinci, Y., et al. (2015) · Microelectronic Engineering · doi:10.1016/j.mee.2015.01.016 · Cited by 16 · see citing works
Self-citationEvaluation of EUV resist performance using interference lithography
Buitrago, E., Yildirim, O., Verspaget, C., Tsugama, N., Hoefnagels, R., Rispens, G., & Ekinci, Y. (2015) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2085803 · Cited by 15 · see citing works
Self-citationWang, L., Kirk, E. C., Wäckerlin, C., et al. (2014) · Nanotechnology · doi:10.1088/0957-4484/25/23/235305 · Cited by 11 · see citing works
Prezioso, S., Marco, P. D., Zuppella, P., et al. (2010) · Review of Scientific Instruments · doi:10.1063/1.3384303 · Cited by 8 · see citing works
Optimization of high average power FEL beam for EUV lithography
Endo, A. (2015) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2182239 · Cited by 2 · see citing works
(2011) · SpringerReference · doi:10.1007/springerreference_16242
Flagged first, then by citations
Research works printed but not linked: 4
- N. Mojarad et al., "Broadband interference lithography at extreme ultra- violet and soft x-ray wavelengths," Opt. Lett. 39(8), 2286-2289 (2014). · DOI
- J. Goodman, Introduction to Fourier Optics, 2nd ed., McGraw-Hill, New York (1996).
- J. Micro/Nanolith. MEMS MOEMS 033505-7 Jul-Sep 2016 • Vol. 15()
- Fan and Ekinci: Photolithography reaches 6 nm half-pitch using extreme ultraviolet light Downloaded From: https://www.spiedigitallibrary.org/journals/Journal-of-Micro/Nanolithography,-MEMS,-and-MOEMS on 18 Feb 2019 Terms of Use: https://www.spiedigitallibrary.org/terms-of-use
Cited by
Sorted by citations
Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149 · see citing works
Self-citationExtreme ultraviolet lithography reaches 5 nm resolution
Giannopoulos, I., Mochi, I., Vockenhuber, M., Ekinci, Y., & Kazazis, D. (2024) · Nanoscale · doi:10.1039/d4nr01332h · Cited by 69 · see citing works
Self-citationEUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning
Constantinou, P., Stock, T. J. Z., Tseng, L.-T., Kazazis, D., Muntwiler, M., Vaz, C. A. F., Ekinci, Y., Aeppli, G., Curson, N. J., & Schofield, S. R. (2024) · Nature Communications · doi:10.1038/s41467-024-44790-6 · Cited by 27 · see citing works
Self-citationHigh-efficiency diffraction gratings for EUV and soft x-rays using spin-on-carbon underlayers
Wang, X., Kazazis, D., Tseng, L.-T., Robinson, A. P. G., & Ekinci, Y. (2022) · Nanotechnology · doi:10.1088/1361-6528/ac328b · Cited by 15 · see citing works
Self-citationDevelopment of EUV interference lithography for 25 nm line/space patterns
Sahoo, A. K., Chen, P.-H., Lin, C.-H., Liu, R.-S., Lin, B.-J., Kao, T.-S., Chiu, P.-W., Huang, T.-P., Lai, W.-Y., Wang, J., et al. (2023) · Micro and Nano Engineering · doi:10.1016/j.mne.2023.100215 · Cited by 6 · see citing works
- Authors
- Fan, D., & Ekinci, Y.
- Affiliations
- Paul Scherrer Institute (CH)
- Venue
- Journal of Micro/Nanopatterning, Materials, and Metrology
- Publisher
- SPIE-Intl Soc Optical Eng
- Published
- 2016-08-01
- Volume
- 15
- Issue
- 03
- Pages
- 1-7
- ISSN
- 2708-8340 (ISSN-L)
- OpenAlex
- W2501698921
- Cited by
- 35
- References
- 21
- Citations by year
- 2026: 3 · 2025: 5 · 2024: 7 · 2023: 4 · 2022: 1 · 2021: 4 · 2020: 2 · 2019: 2 · 2018: 2 · 2017: 4 · 2016: 1
- FWCI
- 1.38
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Journal of Micro/Nanopatterning Materials and Metrology (publishedVersion)
- DORA PSI (Paul Scherrer Institute) (submittedVersion, other-oa)
- Funders
- Swiss National Science Foundation (SNF: 200021_143969)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Engineering › Biomedical Engineering › Nanofabrication and Lithography Techniques
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Keywords
- EUV lithography, interference lithography, atomic layer deposition, ion beam etching, mask making
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
