The DOI matches its Crossref record.
Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon
Abstract
Thin-film epitaxial structures of BaSi2, BaO, and BaTiO3, have been grown on the (001) face of silicon using ultrahigh vacuum, molecular beam epitaxy (MBE) methods. Source shuttering for the metal species coordinated with a pulsed, or cyclic, oxygen arrival at the growing oxide surfaces significantly improves film quality. The epitaxial growth of BaO is accomplished without silica formation at the BaO/Si interface by stabilizing BaSi2 as a submonolayer template structure. In situ ellipsometric measurements of the indices of refraction for BaO and for BaTiO3 in a BaTiO3/BaO/Si multilayer gave n=1.96 for BaO and n=2.2 for the BaTiO3, within 10% of their bulk values. These values suggest that this structure can be developed as an optical waveguide. BaO is impermeable to silicon for films as thin as 10 nm at temperatures as high as 800 °C, and good epitaxy can be obtained from room temperature to 800 °C. The epitaxy is such that BaTiO3(001)∥BaO(001)∥Si(001) and BaTiO 3〈110〉∥BaO〈100〉∥Si〈100〉.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
No references could be resolved yet.
Research works printed but not linked: 7
- 1988, Jpn. J. Appl. Phys., 27, L1025, 10.1143/JJAP.27.L1025 · doi:10.1143/jjap.27.l1025
- 1990, Appl. Phys. Lett., 57, 1161, 10.1063/1.104225 · doi:10.1063/1.104225
- 1991, Appl. Phys. Lett., 58, 419, 10.1063/1.104655 · doi:10.1063/1.104655
- 1978, J. Less-Common Met., 58, 58
- 1980, J. Less-Common Met., 69, 399, 10.1016/0022-5088(80)90299-4 · doi:10.1016/0022-5088(80)90299-4
- 1989, Phys. Rev. Lett., 62, 2476, 10.1103/PhysRevLett.62.2476 · doi:10.1103/physrevlett.62.2476
- 1988, MRS Bull., 16, Aug
Cited by
Crystalline Oxides on Silicon: The First Five Monolayers
McKee, R. A., Walker, F. J., & Chisholm, M. F. (1998) · Physical Review Letters · doi:10.1103/physrevlett.81.3014 · Cited by 1,019
Self-citationRahim, A., Hermans, A., Wohlfeil, B., Petousi, D., Kuyken, B., Van Thourhout, D., & Baets, R. G. (2021) · Advanced Photonics · doi:10.1117/1.ap.3.2.024003 · Cited by 391
A strong electro-optically active lead-free ferroelectric integrated on silicon
Abel, S., Stöferle, T., Marchiori, C., Rossel, C., Rossell, M. D., Erni, R., Caimi, D., Sousa, M., Chelnokov, A., Offrein, B. J., et al. (2013) · Nature Communications · doi:10.1038/ncomms2695 · Cited by 350
Eltes, F., Mai, C., Caimi, D., Kroh, M., Popoff, Y., Winzer, G., Petousi, D., Lischke, S., Ortmann, J. E., Czornomaz, L., et al. (2019) · Journal of Lightwave Technology · doi:10.1109/jlt.2019.2893500 · Cited by 208
c -axis oriented epitaxial BaTiO3 films on (001) Si
Vaithyanathan, V., Lettieri, J., Tian, W., Sharan, A., Vasudevarao, A., Li, Y. L., Kochhar, A., Ma, H., Levy, J., Zschack, P., et al. (2006) · Journal of Applied Physics · doi:10.1063/1.2203208 · Cited by 123
Metadata
- Authors
- McKee, R. A., Walker, F. J., Conner, J. R., Specht, E. D., & Zelmon, D. E.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1991-08-12
- Volume
- 59
- Issue
- 7
- Pages
- 782-784
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2051121787
- Cited by
- 205
- References
- 0
- FWCI
- 10.60
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon. https://app.cochat.ai/papers/10.1063/1.105341
- The paper
- McKee, R. A., Walker, F. J., Conner, J. R., Specht, E. D., & Zelmon, D. E. (1991). Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon. Applied Physics Letters. https://doi.org/10.1063/1.105341
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
