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Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing
Abstract
Interfacial characteristics of Al/SiO2/n-type 6H–SiC metal–oxide–semiconductor capacitors fabricated by rapid thermal processing (RTP) with N2O and NO annealing are investigated. Interface state density was measured by a conductance technique at room temperature. RTP oxidation in pure O2 leads to an excellent SiO2/n-type 6H–SiC interface with interface state density in the order of 1010–1011 eV−1 cm−2. NO annealing improves the SiO2/n-type 6H–SiC interface, while N2O annealing increases the interface state density.
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Citations
Cited by
Material Science and Device Physics in SiC Technology for High-Voltage Power Devices
Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Pearton, S. J., Ren, F., Tadjer, M., & Kim, J. (2018) · Journal of Applied Physics · doi:10.1063/1.5062841 · Cited by 659
Chung, G. Y., Tin, C. C., Williams, J. R., McDonald, K., Chanana, R. K., Weller, R. A., Pantelides, S. T., Feldman, L. C., Holland, O. W., Das, M. K., et al. (2001) · IEEE Electron Device Letters · doi:10.1109/55.915604 · Cited by 641
Okamoto, D., Yano, H., Hirata, K., Hatayama, T., & Fuyuki, T. (2010) · IEEE Electron Device Letters · doi:10.1109/led.2010.2047239 · Cited by 309
Metadata
- Authors
- Li, H.-F., Dimitrijev, S., Harrison, H. B., & Sweatman, D.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1997-04-14
- Volume
- 70
- Issue
- 15
- Pages
- 2028-2030
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W133825022
- Cited by
- 323
- References
- 0
- FWCI
- 7.04
- Type
- journal article
- Language
- en
- Open access
- closed
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- Li, H.-F., Dimitrijev, S., Harrison, H. B., & Sweatman, D. (1997). Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing. Applied Physics Letters. https://doi.org/10.1063/1.118773
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