Cited by 367Thermal properties of materials3D IC and TSV technologiesThermography and Photoacoustic Techniques

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Measurement of thermal conductivity of silicon dioxide thin films using a 3ω method

Yamane, Tsuneyuki, Nagai, Naoto, Katayama, Shin-ichiro, Todoki, Minoru·2002·Journal of Applied Physics

DOI 10.1063/1.1481958

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Abstract

The thermal conductivity of SiO2 thin films prepared using various procedures has been studied using a 3ω method. The thermal conductivity of SiO2 thin films of above approximately 500 nm thickness decreases as the porosity of the specimen, which is determined by infrared absorption spectroscopy, increases. Below approximately 250 nm thickness, the observed thermal conductivity of the SiO2 thin films systematically decreases as a function of film thickness. The data have been analyzed based on a SiO2-thickness-independent thermal conductivity and interfacial resistance. The total estimated interfacial resistance between the metal strip and the film, and between the film and the substrate is about 2×10−8 m2 KW−1.

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Authors: Yamane, T., Nagai, N., Katayama, S.-I., & Todoki, M.
Affiliations: Toray Research Center, Inc. (Japan) (JP)
ORCID: Nagai, Naoto
Venue: Journal of Applied Physics
Publisher: AIP Publishing
Published: 2002-06-15
Volume: 91
Issue: 12
Pages: 9772-9776
ISSN: 0021-8979 (ISSN-L)
1089-7550
DOI: 10.1063/1.1481958
OpenAlex: W2052807145
Cited by: 367
References: 16
Citations by year: 2026: 10 · 2025: 15 · 2024: 10 · 2023: 18 · 2022: 17 · 2021: 14 · 2020: 30 · 2019: 26 · 2018: 24 · 2017: 22 · 2016: 15 · 2015: 23 · 2014: 25 · 2013: 19 · 2012: 19
FWCI: 3.04
Type: journal article
Language: en
Open access: closed
Locations: Journal of Applied Physics (publishedVersion)
Topics: Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
Physical Sciences › Engineering › Electrical and Electronic Engineering › 3D IC and TSV technologies
Physical Sciences › Engineering › Mechanics of Materials › Thermography and Photoacoustic Techniques
Keywords: thermal conductivity, SiO2 thin films, 3ω method, porosity, film thickness dependence, interfacial thermal resistance, metal/film interface, film-substrate interface, infrared absorption spectroscopy

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Measurement of thermal conductivity of silicon dioxide thin films using a 3ω method

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