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Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation
Abstract
An analysis of fast and slow traps at the interface of 4H–SiC with oxides grown in O2, N2O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects located in the near-interfacial oxide layer. In addition, the analysis confirms that the fast interface states related to clustered carbon are also reduced by nitridation.
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Citations
Cited by
Material Science and Device Physics in SiC Technology for High-Voltage Power Devices
Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176
Lelis, A. J., Green, R., Habersat, D. B., & El, M. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2014.2356172 · Cited by 477
Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements
Lelis, A. J., Habersat, D., Green, R., Ogunniyi, A., Gurfinkel, M., Suehle, J., & Goldsman, N. (2008) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2008.926672 · Cited by 326
Review and analysis of SiC MOSFETs’ ruggedness and reliability
Wang, J., & Jiang, X. (2020) · IET Power Electronics · doi:10.1049/iet-pel.2019.0587 · Cited by 221
Metadata
- Authors
- Afanas’ev, V. V., Stesmans, A., Ciobanu, F., Pensl, G., Cheong, K. Y., & Dimitrijev, S.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2003-01-27
- Volume
- 82
- Issue
- 4
- Pages
- 568-570
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2034670541
- Cited by
- 199
- References
- 0
- FWCI
- 9.72
- Type
- journal article
- Language
- en
- Open access
- closed
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- Afanas’ev, V. V., Stesmans, A., Ciobanu, F., Pensl, G., Cheong, K. Y., & Dimitrijev, S. (2003). Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation. Applied Physics Letters. https://doi.org/10.1063/1.1532103
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