The DOI matches its Crossref record; 20 of the 20 references it cites were found in a registry or an index.
Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements
Abstract
We have observed significant instability in the threshold voltage of 4H-SiC metal-oxide-semiconductor field-effect transistors due to gate-bias stressing. This effect has a strong measurement time dependence. For example, a 20-mus-long gate ramp used to measure the I-V characteristic and extract a threshold voltage was found to result in a instability three to four times greater than that measured with a 1-s-long gate ramp. The VTinstability was three times greater in devices that did not receive a NO postoxidation anneal compared with those that did. This instability effect is consistent with electrons directly tunneling in and out of near-interfacial oxide traps, which in irradiated Si MOS was attributed to border traps.
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Citations
Cites
Hole traps and trivalent silicon centers in metal/oxide/silicon devices
Lenahan, P. M., & Dressendorfer, P. V. (1984) · Journal of Applied Physics · doi:10.1063/1.332937 · Cited by 725
Chung, G. Y., Tin, C. C., Williams, J. R., McDonald, K., Chanana, R. K., Weller, R. A., Pantelides, S. T., Feldman, L. C., Holland, O. W., Das, M. K., et al. (2001) · IEEE Electron Device Letters · doi:10.1109/55.915604 · Cited by 641
Chung, G. Y., Tin, C. C., Williams, J. R., McDonald, K., Di Ventra, M., Pantelides, S. T., Feldman, L. C., & Weller, R. A. (2000) · Applied Physics Letters · doi:10.1063/1.126167 · Cited by 438
SiC power-switching devices-the second electronics revolution?
Cooper, J. A., & Agarwal, A. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021561 · Cited by 394
Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing
Li, H.-F., Dimitrijev, S., Harrison, H. B., & Sweatman, D. (1997) · Applied Physics Letters · doi:10.1063/1.118773 · Cited by 323
The nature of the trapped hole annealing process
Lelis, A. J., Oldham, T. R., Boesch, H. E., & McLean, F. B. (1989) · IEEE Transactions on Nuclear Science · doi:10.1109/23.45373 · Cited by 317
Self-citationAdvances in SiC MOS Technology
Cooper, Jr. (1997) · physica status solidi (a) · doi:10.1002/1521-396x(199707)162:1<305::aid-pssa305>3.0.co;2-7 · Cited by 284
Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing
Oldham, T. R., Lelis, A. J., & McLean, F. B. (1986) · IEEE Transactions on Nuclear Science · doi:10.1109/tns.1986.4334579 · Cited by 273
Self-citationStandardized terminology for oxide charges associated with thermally oxidized silicon
Deal, B. E. (1980) · IEEE Transactions on Electron Devices · doi:10.1109/t-ed.1980.19908 · Cited by 258
Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation
Afanas’ev, V. V., Stesmans, A., Ciobanu, F., Pensl, G., Cheong, K. Y., & Dimitrijev, S. (2003) · Applied Physics Letters · doi:10.1063/1.1532103 · Cited by 199
Cited by
Material Science and Device Physics in SiC Technology for High-Voltage Power Devices
Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176
Lelis, A. J., Green, R., Habersat, D. B., & El, M. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2014.2356172 · Cited by 477
Self-citationWang, Z., Shi, X., Xue, Y., Tolbert, L. M., Wang, F., & Blalock, B. J. (2014) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2013.2297304 · Cited by 269
Overview of Real-Time Lifetime Prediction and Extension for SiC Power Converters
Ni, Z., Lyu, X., Yadav, O. P., Singh, B. N., Zheng, S., & Cao, D. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2962503 · Cited by 261
Review and analysis of SiC MOSFETs’ ruggedness and reliability
Wang, J., & Jiang, X. (2020) · IET Power Electronics · doi:10.1049/iet-pel.2019.0587 · Cited by 221
Metadata
- Authors
- Lelis, A. J., Habersat, D., Green, R., Ogunniyi, A., Gurfinkel, M., Suehle, J., & Goldsman, N.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2008-08
- Volume
- 55
- Issue
- 8
- Pages
- 1835-1840
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2121387826
- Cited by
- 326
- References
- 20
- FWCI
- 7.47
- Type
- journal article
- Language
- en
- Open access
- closed
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- Lelis, A. J., Habersat, D., Green, R., Ogunniyi, A., Gurfinkel, M., Suehle, J., & Goldsman, N. (2008). Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2008.926672
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