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Calculated elastic constants for stress problems associated with semiconductor devices

Brantley, W. A.·1973·Journal of Applied Physics

Abstract

Theoretical estimates or experimental determinations of stress fields associated with semiconductor devices are generally simplified with the aid of two elastic constants, Young's modulus E and Poisson's ratio ν. In this paper, a generalized expression for ν has been derived for arbitrary orientations of cubic semiconductor crystals, and the variation of E, ν, and E/(1-ν) for directions within the important {111}, {100}, and {110} planes is examined. The results show that isotropic elasticity theory is exact for all directions within {111} planes and that the composite elastic constant E/(1-ν) which frequently occurs in problems of practical interest is also invariant for all directions within {100} planes. Numerical values for the various elastic constants are tabulated for GaAs, GaP, Si, and Ge.

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Metadata

Authors
Brantley, W. A.
Venue
Journal of Applied Physics
Published
1973-01-01
Volume
44
Issue
1
Pages
534-535
ISSN
  • 0021-8979 (ISSN-L)
  • 1089-7550
OpenAlex
W2085955437
Cited by
1,203
References
0
FWCI
8.50
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Calculated elastic constants for stress problems associated with semiconductor devices. https://app.cochat.ai/papers/10.1063/1.1661935
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Brantley, W. A. (1973). Calculated elastic constants for stress problems associated with semiconductor devices. Journal of Applied Physics. https://doi.org/10.1063/1.1661935

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