The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications
Abstract
Poly(N-vinylcarbazole) (PVK) has been fabricated by spin-coating to show the bistable resistance switching characteristics. Various resistance states can be made by controlling the on-state current through the PVK films. The resistance of the on-state PVK films also affects the turn-off current, which needs to erase the on state. The filament theory is used to elucidate the observed phenomenon. We demonstrate that the PVK films exhibit good retention and stable “read-write-read-erase” cyclic switching characteristics. The PVK films also show a good switching behavior with on-off ratio of 104, which will be a potential material for nonvolatile memory application.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Electrical phenomena in amorphous oxide films
Dearnaley, G., Stoneham, A. M., & Morgan, D. V. (1970) · Reports on Progress in Physics · doi:10.1088/0034-4885/33/3/306 · Cited by 731
Research works printed but not linked: 11
- 2004, Appl. Phys. Lett., 85, 5655, 10.1063/1.1831560 · DOI · Paper page
- 1980, J. Appl. Phys., 51, 3289, 10.1063/1.328036 · DOI · Paper page
- 2005, Phys. Rev. B, 71, 045305, 10.1103/PhysRevB.71.045305 · DOI · Paper page
- 2005, Appl. Phys. Lett., 86, 012107, 10.1063/1.1845598 · DOI · Paper page
- 2004, Chem. Phys. Lett., 399, 284, 10.1016/j.cplett.2004.10.033 · doi:10.1016/j.cplett.2004.10.033
- 2005, Adv. Mater. (Weinheim, Ger.), 17, 455, 10.1002/adma.200401048 · doi:10.1002/adma.200401048
- 2005, J. Appl. Phys., 97, 064507, 10.1063/1.1866496 · doi:10.1063/1.1866496
- 2004, Appl. Phys. Lett., 84, 4908, 10.1063/1.1763222 · doi:10.1063/1.1763222
- 2004, Phys. Rev. Lett., 92, 178302, 10.1103/PhysRevLett.92.178302 · DOI · Paper page
- 2004, J. Appl. Phys., 96, 6585, 10.1063/1.1811391 · doi:10.1063/1.1811391
- 2002, J. Phys. Chem. A, 106, 2192, 10.1021/jp0125101 · doi:10.1021/jp0125101
Cited by
Memory effects in complex materials and nanoscale systems
Pershin, Y. V., & Di Ventra, M. (2011) · Advances In Physics · doi:10.1080/00018732.2010.544961 · Cited by 823
Metadata
- Authors
- Lai, Y.-S., Tu, C.-H., Kwong, D.-L., & Chen, J. S.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2005-09-12
- Volume
- 87
- Issue
- 12
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2032152995
- Cited by
- 186
- References
- 1
- FWCI
- 14.62
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications. https://app.cochat.ai/papers/10.1063/1.2051801
- The paper
- Lai, Y.-S., Tu, C.-H., Kwong, D.-L., & Chen, J. S. (2005). Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications. Applied Physics Letters. https://doi.org/10.1063/1.2051801
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
