Thermal conductivity and electrical properties of 6 H silicon carbide

Burgemeister, E. A.; von Muench, W.; Pettenpaul, E.

doi:10.1063/1.326720

Cited by 168Silicon Carbide Semiconductor TechnologiesThermal properties of materialsAdvanced Thermoelectric Materials and Devices

Thermal conductivity and electrical properties of 6 H silicon carbide

Burgemeister, E. A., von Muench, W., Pettenpaul, E.·1979·Journal of Applied Physics

DOI 10.1063/1.326720

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Abstract

Thermal conductivity measurements of 6H SiC crystals were done in the 300–500 K range by means of radiation thermometry. Both p- and n-type crystals with carrier concentrations in the 8×1015 to 1020 cm−3 range were used. For the purest samples it was found that the thermal conductivity normal to the c axis is proportional to T−1.49, the room-temperature value being 3.87 W/cm deg. It was also found that the thermal conductivity parallel to the c axis is about 30% lower than that normal to the c axis. Electrical data in the 100–1000 K range are also presented.

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The thermal conductivity of 6H-SiC and 4H-SiC along the [0001] axis is about 20-30% less than along the [1000] axis at room temperature.
“Finally, the thermal conductivity of 6H-SiC and 4H-SiC along the [0001] axis has been found to be about 20–30% less than the thermal conductivity along the [1000] axis at room temperature1733.”
From Universal phonon mean free path spectra in crystalline semiconductors at high temperature (2013) · cites this paper as [33]

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Authors: Burgemeister, E. A., von Muench, W., & Pettenpaul, E.
Affiliations: D. Drukker Zn N.V., Sarphatikade 12, Amsterdam, The Netherlands
Institut fuer Halbleitertechnik, Breitscheidstrasse 2, D-7000 Stuttgart, Germany
Siemens (Germany) (DE)
Venue: Journal of Applied Physics
Publisher: AIP Publishing
Published: 1979-09-01
Volume: 50
Issue: 9
Pages: 5790-5794
ISSN: 0021-8979 (ISSN-L)
1089-7550
DOI: 10.1063/1.326720
OpenAlex: W2047210737
Cited by: 168
References: 10
Citations by year: 2026: 6 · 2025: 3 · 2024: 5 · 2023: 7 · 2022: 7 · 2021: 3 · 2020: 11 · 2019: 11 · 2018: 2 · 2017: 12 · 2016: 5 · 2015: 7 · 2014: 7 · 2013: 5 · 2012: 5
FWCI: 0.00
Type: journal article
Language: en
Open access: closed
Locations: Journal of Applied Physics (publishedVersion)
Topics: Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
Physical Sciences › Materials Science › Materials Chemistry › Advanced Thermoelectric Materials and Devices
Keywords: 6H-SiC, thermal conductivity, electrical properties, radiation thermometry, carrier concentration, temperature dependence, anisotropy, low-temperature electrical transport

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Thermal conductivity and electrical properties of 6 H silicon carbide

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