Cited by 108Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesPhase-change materials and chalcogenides

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Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells

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Schroeder, Herbert, Zhirnov, Victor V., Cavin, Ralph K., Waser, Rainer·2010·Journal of Applied Physics

DOI 10.1063/1.3319591

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Abstract

Metal/insulator/metal thin film stacks showing stable resistive switching are promising candidates for future use as a nonvolatile resistive random access memory, competitive to FLASH and DRAM. Although the switching mechanisms are not completely understood a lot of theories and models try to describe the effects. One of them postulates the trapping and detrapping of electronic charge in immobile traps as the reason for the resistance changes, also known as Simmons & Verderber model. This contribution shows that this “pure electronic” switching mechanism will face a voltage-time dilemma—general to all switching insulators—at conditions competitive to the state-of-the-art FLASH. There is an incompatibility between the long retention time (10 years) and the short READ/WRITE current pulses (tREAD/WRITE≤100 ns) at high densities (area≤100×100 nm2) at low applied voltages (≤1 V). This general dilemma is exemplified in two detailed scenarios with different electronic band and defect properties.

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Authors: Schroeder, H., Zhirnov, V. V., Cavin, R. K., & Waser, R.
Affiliations: Forschungszentrum Jülich (DE)
Semiconductor Research Corporation (US)
ORCID: Schroeder, Herbert
Zhirnov, Victor V.
Cavin, Ralph K.
Waser, Rainer
Venue: Journal of Applied Physics
Publisher: AIP Publishing
Published: 2010-03-01
Volume: 107
Issue: 5
ISSN: 0021-8979 (ISSN-L)
1089-7550
DOI: 10.1063/1.3319591
OpenAlex: W2019323909
Cited by: 108
References: 12
Citations by year: 2026: 1 · 2025: 5 · 2024: 7 · 2023: 6 · 2022: 3 · 2021: 11 · 2020: 8 · 2019: 8 · 2018: 4 · 2017: 4 · 2016: 7 · 2015: 9 · 2014: 8 · 2013: 10 · 2012: 7
FWCI: 6.81
Type: journal article
Language: en
Open access: green
juser.fz-juelich.de
Licence: other-oa
Locations: Journal of Applied Physics (publishedVersion)
JuSER (Forschungszentrum Jülich) (submittedVersion, other-oa)
RWTH Publications (RWTH Aachen) (submittedVersion)
Topics: Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
Keywords: resistive random access memory, charge trapping and detrapping, retention time, low-voltage operation, defect properties, non-volatile memory

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Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells

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