The DOI matches its Crossref record; 12 of the 12 references it cites were found in a registry or an index.
Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells
Open accessAbstract
Metal/insulator/metal thin film stacks showing stable resistive switching are promising candidates for future use as a nonvolatile resistive random access memory, competitive to FLASH and DRAM. Although the switching mechanisms are not completely understood a lot of theories and models try to describe the effects. One of them postulates the trapping and detrapping of electronic charge in immobile traps as the reason for the resistance changes, also known as Simmons & Verderber model. This contribution shows that this “pure electronic” switching mechanism will face a voltage-time dilemma—general to all switching insulators—at conditions competitive to the state-of-the-art FLASH. There is an incompatibility between the long retention time (10 years) and the short READ/WRITE current pulses (tREAD/WRITE≤100 ns) at high densities (area≤100×100 nm2) at low applied voltages (≤1 V). This general dilemma is exemplified in two detailed scenarios with different electronic band and defect properties.
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“However, as the programming and reading operations share identical terminals, there is a contradiction between the stability of the trapped charges (i.e., retention) and the reliability of the programming process (i.e., writing or erasing).[ 20 ]”
From Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware (2023) · cites this paper as [20]
Citations
Cites
Messiah, A. (1961) · Cited by 16,012
Electron emission in intense electric fields
Fowler, R. H., & Nordheim, L. W. (1928) · Proceedings of the Royal Society of London Series A Containing Papers of a Mathematical and Physical Character · doi:10.1098/rspa.1928.0091 · Cited by 5,767
Electrical Transport in Solids
Kao, K. C., Hwang, W.-J., & Choi, S.-I. (1983) · Physics Today · doi:10.1063/1.2915326 · Cited by 799
New conduction and reversible memory phenomena in thin insulating films
Simmons, J. G., & Verderber, R. R. (1967) · Proceedings of the Royal Society of London A Mathematical and Physical Sciences · doi:10.1098/rspa.1967.0191 · Cited by 556
Colossal electroresistance of a Pr0.7Ca0.3MnO3 thin film at room temperature
Odagawa, A., Sato, H., Inoue, I. H., Akoh, H., Kawasaki, M., Tokura, Y., Kanno, T., & Adachi, H. (2004) · Physical Review B · doi:10.1103/physrevb.70.224403 · Cited by 282
Layered tunnel barriers for nonvolatile memory devices
Likharev, K. K. (1998) · Applied Physics Letters · doi:10.1063/1.122402 · Cited by 227
Hofman, W., Hoffmann‐Eifert, S., & Waser, R. M. (1997) · Thin Solid Films · doi:10.1016/s0040-6090(96)09508-9 · Cited by 89
Self-citationSwitching and Memory Characteristics of ZnSe - Ge Heterojunctions
Hovel, H. J., & Urgell, J. J. (1971) · Journal of Applied Physics · doi:10.1063/1.1659895 · Cited by 61
Electronic memory device based on a single-layer fluorene-containing organic thin film
Pearson, C., Ahn, J. H., Mabrook, M. F., Zeze, D. A., Petty, M. C., Kamtekar, K. T., Wang, C., Bryce, M. R., Dimitrakis, P., & Tsoukalas, D. (2007) · Applied Physics Letters · doi:10.1063/1.2783481 · Cited by 41
Effect of top electrode on resistance switching of (Pr, Ca)MnO3 thin films
Kim, C. J., & Chen, I. (2006) · Thin Solid Films · doi:10.1016/j.tsf.2006.03.031 · Cited by 37
Research works printed but not linked: 2
- 1967, Proc. Roy. Soc., A301, 77
- 1995, NATO ASI Ser., Ser. E Appl. Sci., 284, 223
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Emerging memories: resistive switching mechanisms and current status
Jeong, D. S., Thomas, R., Katiyar, R. S., Scott, J. F., Kohlstedt, H., Petraru, A., & Hwang, C. S. (2012) · Reports on Progress in Physics · doi:10.1088/0034-4885/75/7/076502 · Cited by 1,099
Electrochemical metallization memories—fundamentals, applications, prospects
Valov, I., Waser, R., Jameson, J. R., & Kozicki, M. N. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/25/254003 · Cited by 921
Self-citationResistive switching phenomena: A review of statistical physics approaches
Lee, J. S., Lee, S., & Noh, T. W. (2015) · Applied Physics Reviews · doi:10.1063/1.4929512 · Cited by 462
Serb, A., Bill, J., Khiat, A., Berdan, R., Legenstein, R. A., & Prodromakis, T. (2016) · Nature Communications · doi:10.1038/ncomms12611 · Cited by 340
Stochastic memristive devices for computing and neuromorphic applications
Gaba, S., Sheridan, P., Zhou, J., Choi, S., & Lu, W. (2013) · Nanoscale · doi:10.1039/c3nr01176c · Cited by 307
“The strong voltage dependence of (average) switching time is expected within the filament formation picture since the energy barriers for both the oxidation and the ion transport processes are field-dependent (the reduction processes of the ions is not thought to be the rate-limiting process) (5,18) and the effective…”
Background
Metadata
- Authors
- Schroeder, H., Zhirnov, V. V., Cavin, R. K., & Waser, R.
- Affiliations
- Forschungszentrum Jülich (DE)
- Semiconductor Research Corporation (US)
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2010-03-01
- Volume
- 107
- Issue
- 5
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2019323909
- Cited by
- 108
- References
- 12
- Citations by year
- 2026: 1 · 2025: 5 · 2024: 7 · 2023: 6 · 2022: 3 · 2021: 11 · 2020: 8 · 2019: 8 · 2018: 4 · 2017: 4 · 2016: 7 · 2015: 9 · 2014: 8 · 2013: 10 · 2012: 7
- FWCI
- 6.81
- Type
- journal article
- Language
- en
- Open access
- green
- juser.fz-juelich.de
- Licence
- other-oa
- Locations
- Journal of Applied Physics (publishedVersion)
- JuSER (Forschungszentrum Jülich) (submittedVersion, other-oa)
- RWTH Publications (RWTH Aachen) (submittedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- resistive random access memory, charge trapping and detrapping, retention time, low-voltage operation, defect properties, non-volatile memory
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