Layer-by-layer thermal conductivities of the Group III nitride films in blue/green light emitting diodes
Open accessAbstract
Thermal conductivities (k) of the individual layers of a GaN-based light emitting diode (LED) were measured along [0001] using the 3-omega method from 100-400 K. Base layers of AlN, GaN, and InGaN, grown by organometallic vapor phase epitaxy on SiC, have effective k much lower than bulk values. The 100 nm thick AlN layer has k = 0.93 ± 0.16 W/mK at 300 K, which is suppressed >100 times relative to bulk AlN. Transmission electron microscope images revealed high dislocation densities (4 × 1010 cm−2) within AlN and a severely defective AlN-SiC interface that cause additional phonon scattering. Resultant thermal resistances degrade LED performance and lifetime making layer-by-layer k, a critical design metric for LEDs.
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Thin film architectures and nanostructures possess reduced thermal conductivities compared to bulk materials due to boundary scattering, which limits phonon MFPs.
“Thin film architectures and nanostructures possess reduced thermal conductivities compared to bulk materials due to boundary scattering, which limits phonon MFPs202122.”
From Universal phonon mean free path spectra in crystalline semiconductors at high temperature (2013) · cites this paper as [22]
Cites
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Thermal conductance of interfaces between highly dissimilar materials
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Measurement of thermal conductivity of silicon dioxide thin films using a 3ω method
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Accurate dependence of gallium nitride thermal conductivity on dislocation density
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Universal phonon mean free path spectra in crystalline semiconductors at high temperature
Freedman, J. P., Leach, J. H., Preble, E. A., Sitar, Z., Davis, R. F., & Malen, J. A. (2013) · Scientific Reports · doi:10.1038/srep02963 · Cited by 171 · see citing works
Self-citationThermal boundary conductance across metal-gallium nitride interfaces from 80 to 450 K
Donovan, B. F., Szwejkowski, C. J., Duda, J. C., Cheaito, R., Gaskins, J. T., Peter Yang, C.-Y., Constantin, C., Jones, R. E., & Hopkins, P. E. (2014) · Applied Physics Letters · doi:10.1063/1.4902233 · Cited by 72 · see citing works
Wang, L., Cheaito, R., Braun, J. L., Giri, A., & Hopkins, P. E. (2016) · Review of Scientific Instruments · doi:10.1063/1.4962711 · Cited by 63 · see citing works
- Authors
- Su, Z., Huang, L., Liu, F., Freedman, J. P., Porter, L. M., Davis, R. F., & Malen, J. A.
- Affiliations
- Carnegie Mellon University (US)
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2012-05-14
- Volume
- 100
- Issue
- 20
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2084042521
- Cited by
- 51
- References
- 4
- Citations by year
- 2026: 3 · 2025: 1 · 2024: 2 · 2022: 5 · 2021: 7 · 2020: 4 · 2019: 4 · 2018: 1 · 2017: 4 · 2016: 4 · 2015: 6 · 2014: 4 · 2013: 6
- FWCI
- 3.48
- Type
- journal article
- Language
- en
- Open access
- green
- figshare.com
- Licence
- cc-by
- Locations
- Applied Physics Letters (publishedVersion)
- KiltHub Repository (submittedVersion)
- Figshare (submittedVersion, cc-by)
- KiltHub Repository
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Keywords
- thermal conductivity, III-nitride thin films, GaN, aluminum nitride, InGaN, 3ω method, dislocation density, phonon scattering, thermal resistance, low thermal conductivity, SiC substrate
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